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首页> 外文期刊>Journal of Electronic Materials >Efficiency Enhancement in Dye-Sensitized Solar Cells with ZnO and TiO2 Blocking Layers
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Efficiency Enhancement in Dye-Sensitized Solar Cells with ZnO and TiO2 Blocking Layers

机译：用ZnO和TiO2阻挡层染料敏化太阳能电池效率增强

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摘要

Dye-sensitized solar cells (DSSCs) have great potential for solar generation owing to their low cost and ease of fabrication compared with silicon-based photovoltaic devices. One of the major issues with TiO2-based DSSCs is the recombination loss at the substrate-electrolyte interface due to the mesoporous nature of the TiO2 film. It was proposed earlier that introduction of a blocking layer at the substrate-TiO2 interface could reduce this recombination loss by preventing direct contact of the substrate and electrolyte. In this study, ZnO blocking layers (ZBLs) with different thicknesses were spin-coated onto fluorine-doped tin oxide (FTO) glass and the influence studied in comparison with a conventional TiO2 blocking layer (TBL) prepared using the same technique. The ZBL functions as an energy barrier at the FTO-electrolyte interface to prevent backtransfer of electrons to the electrolyte from the FTO. The blocking effect of the ZBL was verified by an enhancement of the fill factor (FF) and open-circuit photovoltage (V-oc) of the DSSC, leading to an improvement in the power conversion efficiency (PCE) from 3.86% to 4.34% for the ZBL with optimum thickness of 120nm. The suppression of the dark current density revealed a reduction of charge recombination with increasing ZBL thickness. Further increase in the ZBL thickness resulted in reduced cell performance due to a drastic decrease of the short-circuit current density (J(sc)). The PCE was slightly improved to 4.36% by replacing the ZBL with a 100-nm TBL. These results suggest that the facile and low-cost sol-gel spin-coating technique is a feasible method for formation of a ZBL or TBL to reduce the recombination loss in DSSCs.
机译：由于与硅基光伏器件相比，由于它们的低成本和易于制造，染料敏化太阳能电池（DSSCs）具有很大的太阳能潜力。基于TiO2的DSSCs的主要问题之一是由于TiO 2膜的介孔性质，基于基板电解质界面的重组损失。提出之前，通过防止基材和电解质的直接接触，引入基板-TiO2界面处的阻断层可以降低该重组损失。在该研究中，将具有不同厚度的ZnO阻断层（ZBL）旋涂到氟掺杂的氧化锡（FTO）玻璃上，与使用相同技术制备的常规TiO 2阻挡层（TBL）进行的影响。 ZBL用作FTO电解质界面处的能量屏障，以防止电子对来自FTO的电解质的转换。通过DSSC的填充因子（FF）和开路光伏电压（V-OC）的增强来验证ZBL的阻塞效果，从3.86％到4.34％的电力转换效率（PCE）的改善对于ZBL，最佳厚度为120nm。抑制暗电流密度的抑制表明，随着ZBL厚度的增加，电荷重组的减少。由于短路电流密度的急剧降低（J（SC）），ZBL厚度的进一步增加导致电池性能降低。通过用100nm Tbl取代Zbl，PCE略微改善至4.36％。这些结果表明，容易和低成本的溶胶 - 凝胶旋涂技术是形成ZBL或TBL的可行方法，以降低DSSCs中的重组损失。

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