Crystallization and Resistance Behavior of MgSb/Sb Multilayer Thin Films for Memory Application

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Crystallization and Resistance Behavior of MgSb/Sb Multilayer Thin Films for Memory Application

机译：MGSB / SB多层薄膜用于存储器应用的结晶和电阻性能

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The phase transition properties of MgSb/Sb multilayer thin films were studied systematically. After composited with MgSb layer, MgSb/Sb thin film had better amorphous stability and higher resistance. One-dimensional growth dominated mechanism made MgSb/Sb have ultra-fast phase change speed. The grain growth and interface stress resulted in a little change on surface morphology during crystallization. The multilayer structure was confirmed by element distribution on cross section. The reversible resistance switching was achieved on [MgSb(7 nm)/Sb(3 nm)](5)-based device. This work showed that MgSb/Sb multilayer film was a potential material with fast speed and low power consumption for phase change memory application.

机译：系统地研究了MGSB / SB多层薄膜的相变性。在用MGSB层进行编写后，MGSB / SB薄膜具有更好的无定形稳定性和更高的电阻。一维生长主导机构使MGSB / SB具有超快速相变速。晶粒生长和界面应力导致结晶过程中表面形态变化。通过在横截面上的元素分布确认多层结构。基于[MgSB（7nm）/ Sb（3nm）]（5）的装置，实现了可逆电阻切换。这项工作表明，MGSB / SB多层膜是具有快速速度和低功耗的潜在材料，用于相变存储器应用。

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《Journal of Electronic Materials》 |2020年第2期|共5页
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正文语种 eng
中图分类计量学;材料;
关键词
MgSb/Sb multilayer thin film; crystallization behavior; resistance mutation; phase change memory;

机译：MGSB / SB多层薄膜;结晶行为;电阻突变;相变存储器;

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1. Crystallization and Resistance Behavior of MgSb/Sb Multilayer Thin Films for Memory Application [J] . Journal of Electronic Materials . 2020,第2期

机译：MGSB / SB多层薄膜用于存储器应用的结晶和电阻性能
2. Rapid crystallization of SiO_2/Sb_(80)Te_(20) nanocomposite multilayer films for phase-change memory applications [J] . Changzhou Wang, Simian Li, Jiwei Zhai Scripta materialia . 2011,第7期

机译：用于相变存储应用的SiO_2 / Sb_（80）Te_（20）纳米复合多层膜的快速结晶
3. Investigation of multilayer SnSb4/ZnSb thin films for phase change memory applications [J] . He Zifang, Chen Shiyu, Wu Weihua, Applied physics express . 2017,第5期

机译：用于相变存储应用的多层SnSb4 / ZnSb薄膜的研究
4. The crystallization behavior and interfacial reaction of Ge2Sb2Te5 thin films between dielectric material for the application to the phase change memory [C] . E.J.Jung, S.K.Rang, B.G Min, The Meeting of the Electrochemical Society . 2003

机译：电介质材料在相变存储器中的Ge2SB2Te5薄膜的结晶行为和界面反应
5. Crystallization and martensitic transformation behavior of nickel-titanium shape memory alloy thin films. [D] . Wang, Xi. 2007

机译：镍钛形状记忆合金薄膜的结晶和马氏体转变行为。
6. Resistive switching behavior in Lu2O3 thin film for advanced flexible memory applications [O] . Somnath Mondal, Jim-Long Her, Keiichi Koyama, 2014

机译：用于高级柔性存储应用的Lu2O3薄膜中的电阻开关行为
7. Resistance switching behavior of ZnO thin films for random access memory applications [O] . Trung Do Nguyen, Van Thuy Dao, Kim Ngoc Pham, 2013

机译：随机存取存储器应用的ZnO薄膜电阻切换行为

Crystallization and Resistance Behavior of MgSb/Sb Multilayer Thin Films for Memory Application

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