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首页> 外文期刊>Journal of Electronic Materials >Fabrication of a Nanoscale Electrical Contact on a Bismuth Nanowire Encapsulated in a Quartz Template by Using FIB-SEM
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Fabrication of a Nanoscale Electrical Contact on a Bismuth Nanowire Encapsulated in a Quartz Template by Using FIB-SEM

机译：通过使用FIB-SEM在石英模板中封装在石英模板中的铋纳米线上的纳米级电接触的制造

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摘要

A method to fabricate an electrode on a 110-nm-diameter Bi nanowire, encapsulated in a quartz template, was established using a dual beam instrument equipped with a focused ion beam and a scanning electron microscope. A fabrication method has already been successfully developed to obtain suitable Ohmic contact on both ends of Bi nanowires (several hundred nanometers in diameter) by first polishing the ends of the nanowires, and then depositing titanium/copper thin-films via an ion-plating method. However, with this method, it was difficult to obtain suitable electrodes on Bi nanowires with diameters less than 300 nm. Therefore, in order to understand why it was not possible to establish an electrical contact in small-diameter Bi nanowires, the vertical section of the fabricated electrode and the end of a 110-nm-diameter Bi nanowire were observed using a focused ion beam scanning electron microscope. A vacant area was observed between the end of the nanowire and the titanium thin-film, indicating a possible cause for the electrical contact failure. This implies that the quartz-encapsulated Bi nanowire is selectively removed when it undergoes polishing due to the great difference in hardness between Bi and quartz. A local electrode, which would connect the exposed area of the Bi nanowire and the metal thin-films on the surface of the quartz template, was fabricated by tungsten deposition using an electron beam. After fabrication of the opposite-end electrode by the same method, an electrical connection was successfully confirmed by measuring the voltage between both ends of the metal thin-films with a circuit tester. Ohmic contact was confirmed by measuring the current-voltage characteristics between the fabricated electrodes. As a result, the electrical resistivity and Seebeck coefficient were successfully measured at 300 K.
机译：使用配备有聚焦离子束和扫描电子显微镜的双光束仪器建立在石英模板中封装在石英模板上的110nm-Diament BI纳米线上的方法。已经成功开发了一种制造方法，以通过首先抛光纳米线的端部，然后通过离子电镀方法沉积钛/铜薄膜的两端的两端（直径数百纳米）的合适的欧姆接触。 。然而，通过这种方法，难以在直径小于300nm的Bi纳米线上获得合适的电极。因此，为了理解为什么不可能在小直径Bi纳米线中建立电接触，使用聚焦离子束扫描观察制造电极的垂直部分和110nm直径的Bi纳米线的端部电子显微镜。在纳米线的末端和钛薄膜的末端之间观察到空置区域，表示电接触失效的可能原因。这意味着当由于BI和石英之间的硬度差异而受到抛光时，可以选择性地去除石英封装的BI纳米线。通过使用电子束通过钨沉积来制造将在石纳米线的暴露区域连接到石英模板表面上的金属薄膜的局部电极。通过相同的方法制造相对端电极之后，通过用电路测试仪测量金属薄膜的两端之间的电压来成功确认电连接。通过测量制造电极之间的电流 - 电压特性来确认欧姆接触。结果，在300k上成功测量电阻率和塞贝克系数。

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