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首页> 外文期刊>Journal of Materials Science >Fabrication and optoelectronic properties of Ga2O3/Eu epitaxial films on nanoporous GaN distributed Bragg reflectors
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Fabrication and optoelectronic properties of Ga2O3/Eu epitaxial films on nanoporous GaN distributed Bragg reflectors

机译：纳米孔GaN分布式布拉格反射器Ga2O3 / Eu外延膜的制造和光电性能

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摘要

Nanoporous GaN distributed Bragg reflectors (DBRs) with a high reflectivity (similar to 92%), which was fabricated via a doping selective electrochemical etching process, were used to deposit Eu-doped beta-Ga2O3 films by using pulsed layer deposition. Structural and chemical composition analyses indicated that the 900 degrees C-annealed film in air has the best crystalline quality and highest photoluminescence (PL) efficiency. The epitaxial relationship between the beta-Ga2O3: Eu film and DBR mirror was Ga2O3 (2 over bar ;GaN (0001) with Ga2O3 [010]& x2551;GaN [1 over bar21 over bar 0]. Compared to the Eu:Ga2O3 film on reference template, the 900 degrees C-annealed film on the DBR mirror presented a similar to 20-fold enhancement in the PL emission. The performance enhancement was attributed to light-coupling enhancement of the buried DBR mirror. Because of the good electrical properties of the annealed films, the fabricated DBR substrates pave the way for developing a range of rare-earth-doped Ga2O3 optoelectronic devices.
机译：具有高反射率（类似于92％）的纳米多孔GaN分布式布拉格反射器（DBR）通过掺杂选择性电化学蚀刻工艺制造，用于通过使用脉冲层沉积沉积Eu掺杂的β-Ga2O3膜。结构和化学成分分析表明，空气中的900摄氏度膜具有最佳的晶体质量和最高光致发光（PL）效率。 Beta-Ga2O3：欧盟膜和DBR镜之间的外延关系是Ga2O3（2 over Bar; GaN（0001），Ga2O3和x2551; GaN [1在Bar21上方的条形图0]。与欧盟：Ga2O3薄膜相比在参考模板上，DBR镜上的900摄氏度膜呈现出类似于PL发射的20倍的增强。性能增强归因于埋地的DBR镜的光耦合增强。由于电气性质良好在退火薄膜中，制造的DBR基板铺平了开发一系列稀土掺杂Ga2O3光电器件的方法。

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