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首页> 外文期刊>Journal of Materials Science >Enhanced magnetization and bias voltage-dependent dielectric properties of Sm-doped BiFeO3 multiferroic nanofibers
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Enhanced magnetization and bias voltage-dependent dielectric properties of Sm-doped BiFeO3 multiferroic nanofibers

机译:SM掺杂BIFEO3多二二碳纤维质的增强磁化和偏置电压依赖性介电性能

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摘要

The simultaneous enhancement of magnetic and ferroelectric properties of one-dimensional nanostructured bismuth ferrite (BiFeO3) is highly desired due to their potential applications in nanoscale devices, such as multistate memory device and micro-magnetoelectric sensor. Sm-doped BiFeO3 nanofibers were synthesized by a sol-gel-based electrospinning process. The as-fabricated nanofibers show significantly enhanced magnetization due to the suppressed periodic spin cycloid and the uncompensated surface spins. The magnetization of Bi0.90Sm0.10FeO3 nanofibers is nearly twice as much as that of the nanoparticles at the same doping level. More importantly, Sm-doped BiFeO3 nanofibers hold the higher dielectric constant and stronger DC bias-dependent dielectric constant due to the enhanced polarization by Sm doping. Temperature-dependent dielectric constant and dissipation factor suggest that the dielectric properties of Sm-doped BiFeO3 nanofibers remain stable below 250 degrees C, providing a wide temperature range for applications in memory devices or sensors. The tuning of magnetic and ferroelectric properties of the Sm-doped BiFeO3 nanofibers appears to be very promising for achieving multifunctionality in a single material.
机译:一维的纳米结构铁酸铋(的BiFeO 3)的磁性和铁电性能的同时增强被高度由于它们在纳米级装置,如多态存储器装置和微磁传感器的潜在应用所需的。钐掺杂的纳米纤维的BiFeO 3,通过基于溶胶 - 凝胶电纺丝工艺合成。将如此制造的纳米纤维显示出显著增强磁化由于抑制周期性自旋摆线和未补偿的表面旋转。 Bi0.90Sm0.10FeO3纳米纤维的磁化是几乎两倍,在相同的掺杂水平的纳米颗粒。更重要的是,钐掺杂的纳米纤维的BiFeO 3保持高的介电常数和更强的直流偏置依赖性的介电常数由于钐掺杂增强极化。温度依赖性介电常数和损耗因数表明,钐掺杂的纳米纤维的BiFeO 3的介电性质保持稳定低于250摄氏度,提供了一个宽的温度范围为在存储器设备或传感器的应用程序。钐掺杂的纳米纤维的BiFeO 3的磁性和铁电性能的调谐似乎对于在单一材料实现多功能性非常有前景。

著录项

  • 来源
    《Journal of Materials Science》 |2018年第14期|共12页
  • 作者单位

    Beijing Univ Chem Technol Sch Sci Beijing 100029 Peoples R China;

    Beijing Univ Chem Technol Sch Sci Beijing 100029 Peoples R China;

    Xian Res Inst High Tech Dept 501 Xian 710025 Shaanxi Peoples R China;

    Beijing Univ Chem Technol Sch Sci Beijing 100029 Peoples R China;

    Beijing Univ Chem Technol Sch Sci Beijing 100029 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
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