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首页> 外文期刊>Journal of nanoscience and nanotechnology >A Study on the Formation of 2-Dimensional Tungsten Disulfide Thin Films on Sapphire Substrate by Sputtering and High Temperature Rapid Thermal Processing
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A Study on the Formation of 2-Dimensional Tungsten Disulfide Thin Films on Sapphire Substrate by Sputtering and High Temperature Rapid Thermal Processing

机译：通过溅射和高温快速热加工对蓝宝石衬底形成二维钨二硫化薄膜的研究

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摘要

As direct formation of p-type two-dimensional transition metal dichalcogenides (TMDC) films on substrates, tungsten disulfide (WS2) thin films were deposited onto sapphire glass substrate through shadow mask patterns by radio-frequency (RF) sputtering at different sputtering powers ranging from 60 W to 150 W and annealed by rapid thermal processing (RTP) at various high temperatures ranging from 500 degrees C to 800 degrees C. Based on scanning electron microscope (SEM) images and Raman spectra, better surface roughness and mode dominant E-2g(1) and A(g)(1) peaks were found for WS2 thin films prepared at higher RF sputtering powers. It was also possible to obtain high mobilities and carrier densities for all WS2 thin films based on results of Hall measurements. Process conditions for these WS2 thin films on sapphire substrate were optimized to low RF sputtering power and high temperature annealing.
机译：作为在底物上的p型二维过渡金属二甲硅烷（TMDC）薄膜的直接形成，通过在不同溅射功率的射频（RF）溅射测距中，通过阴影掩模图案沉积在蓝宝石玻璃基板上的钨二硫化物（WS2）薄膜。 从60 W到150W，通过快速热处理（RTP）在500摄氏度范围为500℃至800摄氏度的快速热处理（RTP）。基于扫描电子显微镜（SEM）图像和拉曼光谱，更好的表面粗糙度和模式优势E- 对于在更高的RF溅射功率下制备的WS2薄膜，发现了2g（1）和（g）（1）峰。 还可以基于霍尔测量结果获得所有WS2薄膜的高摩托和载波密度。 在蓝宝石衬底上的这些WS2薄膜的工艺条件被优化到低RF溅射功率和高温退火。

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