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首页> 外文期刊>Journal of Materials Chemistry, A. Materials for energy and sustainability >Linking thermoelectric generation in polycrystalline semiconductors to grain boundary effects sets a platform for novel Seebeck effect-based sensors
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Linking thermoelectric generation in polycrystalline semiconductors to grain boundary effects sets a platform for novel Seebeck effect-based sensors

机译：将多晶半导体中的热电生成连接到晶界效果为基于新颖的Seebeck效果的传感器设定了一个平台

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摘要

Data available on the thermoelectric properties of polycrystalline semiconductors are inconsistent, riddled with gaps, and ascribe stronger Seebeck effects to polycrystalline samples rather than single crystals. Here, by demonstrating the profound contribution of grain boundaries to the Seebeck voltage generation, we link the thermoelectricity in polycrystalline semiconductors to the grain boundary effects therein. The magnitude of this contribution is analytically related to the height and width of intergranular barriers, which are extrinsic properties in a polycrystalline sample and can be affected by external physicochemical parameters. Occurrences of chemo- and piezo-thermoelectric effects are analytically predicted and experimentally verified by the results of measurements on SnO2 and ZnO samples with different nanostructures under various conditions. The presented model sets a platform for designing a range of novel Seebeck effect-based sensors, and unveils the potential of polycrystalline semiconductors with appropriately designed intergranular barriers as thermoelectric materials.
机译：多晶半导体热电性能的数据不一致，散布隙，并归因于多晶样品而不是单晶的塞贝克效应。这里，通过展示晶界对塞贝克电压产生的深刻贡献，我们将多晶半导体中的热电联系到其中的晶界效应。该贡献的大小与晶间屏障的高度和宽度有关，这是多晶样品中的外在性质，并且可以受到外部物理化学参数的影响。通过在各种条件下具有不同纳米结构的SnO2和ZnO样品的测量结果进行了分析预测和实验验证了化学和压电 - 热电效应的发生。所提出的模型设定了一种用于设计一系列新型塞贝克效应的传感器的平台，并推出多晶半导体的电位，具有适当设计的晶体屏障作为热电材料。

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