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首页> 外文期刊>Journal of Materials Chemistry, A. Materials for energy and sustainability >Surfactant-free synthesis of a nanoperforated graphene/nitrogen-doped carbon nanotube composite for supercapacitors
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Surfactant-free synthesis of a nanoperforated graphene/nitrogen-doped carbon nanotube composite for supercapacitors

机译：超级电容器的无纳米硼石墨烯/氮掺杂碳纳米管复合材料的表面活性剂合成

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摘要

A nanoperforated graphene/carbon nanotube (PG/CNT) composite is fabricated by electrostatic interaction of graphene oxide (GO) and nitrogen-doped CNTs, and subsequent catalytic carbon gasification. The nitrogen-doped sites (pyridinic N sites) of the CNTs are protonated under acidic conditions owing to the lone pair electrons, rendering the CNTs positively charged. The nitrogen-doped CNTs are uniformly incorporated into PG to form the PG/CNT composite through electrostatic attraction between the positively charged CNTs and the negatively charged GO. The resulting PG/nitrogen-doped CNT (N-CNT) composite exhibits outstanding electrochemical properties, showing high specific capacitance (288 F g(-1) at 0.5 A g(-1)) and high rate capability (267 F g(-1) at 20 A g(-1)) as well as excellent cycling stability (99% capacitance retention after 30 000 charge/discharge cycles). This is attributable to not only the formation of a high concentration of edge sites in PG and improvements of cross-plane ion diffusion owing to the nanoperforations, but also the enhancements in the ion-accessible area and in-plane ion diffusion due to the incorporation of N-CNT nanospacers into PG.
机译：通过石墨烯（GO）和氮掺杂CNT的静电相互作用和随后的催化碳气化来制造纳米硼酸石墨烯/碳纳米管（PG / CNT）复合材料。由于孤立的电子电子，在酸性条件下，CNT的氮掺杂位点（吡啶n位点）在酸性条件下质子化，使CNT带正电荷。将氮掺杂的CNT均匀地掺入PG中，以通过带正电荷的CNT和带负电的GO之间的静电吸引形成PG / CNT复合材料。所得的pg /氮掺杂的Cnt（n-cnt）复合材料表现出优异的电化学性质，显示出高比电容（288 f g（-1），在0.5 a g（-1））和高速率能力（267 f g（ - 1）在20 a g（-1））以及优异的循环稳定性（30 000次充电/放电循环后99％电容保留）。这可归因于不仅形成PG中的高浓度的边缘位点和由于纳米机构而改善的交叉平面离子扩散，而且由于纳入而导致的离子可接近区域和面内离子扩散的增强N-CNT纳米术中的pG。

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