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首页> 外文期刊>Journal of Nuclear Materials: Materials Aspects of Fission and Fusion >The interstitial emission mechanism in a vanadium -based alloy
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The interstitial emission mechanism in a vanadium -based alloy

机译：基于钒基金的间质排放机制

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摘要

Under nuclear fusion environments, displacement cascades in the potential first protective wall material vanadium (V) and its alloys lead to a large number of point defects. As sink of point defects, grain boundaries are observed to significantly affect the radiation resistance of structured metals. By using potential energy surface searching tools, the interaction between the interstitial-loaded Nu 3 < 110 >{111} symmetric tilt grain boundary (STGB) and the point defects in V-based alloy is investigated. For the self-interstitial atoms (SIA)-loaded STGB, the vacancy located within certain distances from the STGB can be effectively annihilated within several nanoseconds via the interstitial emission (IE) mechanism. If an alloy doping interstitial as a Cr atom substitute the SIA, or the vacancy is stabilized by alloy solutes as Ti atoms forming a solute-vacancy complex near the STGB, IE works more effectively with lower activation energy barriers and less thermal activation time. The results indicate that the STGB-induced IE mechanism raises the radiation resistance of the V-based alloy. The results contribute to the micro-structure and constituent optimizations in designing an excellent V-based first protective wall material. (c) 2020 Elsevier B.V. All rights reserved.
机译：在核聚变环境下，位移级联潜在的第一保护壁材料钒（V）及其合金导致大量点缺陷。作为点缺陷的下沉，观察到晶界以显着影响结构化金属的辐射抗性。通过使用势能表面搜索工具，研究了间隙加载的NU 3 <110> {111}对称倾斜晶界（STGB）与V基合金中的点缺陷之间的相互作用。对于自透式原子（SIA） - 加载的STGB，可以通过间隙发射（IE）机制在几纳秒内有效地将位于STGB内的某些距离内的空位。如果掺杂间质的合金作为CR原子替换SIA，或者通过合金溶质稳定空位，作为Ti原子，形成在STGB附近的溶质空位，即用较低的激活能屏障和较少的热活化时间工作。结果表明，STGB诱导的IE机构提高了V基合金的辐射抗性。结果有助于设计优异的基于V的第一保护壁材料的微结构和组成优化。 （c）2020 Elsevier B.v.保留所有权利。

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