...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Nonvolatile charge memory with optical controllability in two-terminal pristine alpha-In2Se3 nanosheets
【24h】

Nonvolatile charge memory with optical controllability in two-terminal pristine alpha-In2Se3 nanosheets

机译：非易失性充电存储器，具有双端子原始alpha-In2Se3纳米片中的光学控制性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Two-dimensional (2D) materials offer a promising platform for next-generation data-storage devices due to their unique planar structure, as well as brilliant electronic properties. However, the reported 2D materials-based nonvolatile memory devices have complicated architectures with multilayer stacking of 2D materials, metals, organics or oxides, which limits their capacity for device miniaturization, scalability and integration functionality. In this work, we propose a nonvolatile charge memory in pristine alpha-In2Se3 nanosheets with a two-terminal configuration. We present a programmable nonvolatile charge memory via applying gate voltage pulses. The devices show superb memory properties at room temperature with a large memory window, long retention time and robust endurance, which are comparable with 2D material heterostructures. Further, we demonstrate an optical manipulation of charge storage with laser power-controlled numbers of stored charges and on/off ratio. Supported by a theoretical model, we find the nonvolatile charge storage originates from the surficial/interfacial trapped electrons, which are removed via photo-generated holes. Our photo-tunable nonvolatile charge memory devices with simple structure pave the way towards large-scale integration and high-speed intelligent electronics, such as ultrafast remote operation on data coding, artificial synapse and neurons.
机译：二维（2D）材料由于其独特的平面结构以及辉煌的电子特性为下一代数据存储设备提供了一个有希望的平台。然而，报告的基于材料的非易失性存储器件具有复杂的架构，具有多层堆叠的2D材料，金属，有机物或氧化物，这限制了它们的设备小型化，可扩展性和集成功能的能力。在这项工作中，我们提出了一种具有双端子配置的原始α-In2Se3纳米片中的非易失性充电存储器。我们通过应用栅极电压脉冲呈现可编程非易失性充电存储器。该器件在室温下显示精湛的存储器性能，具有大的内存窗口，长期保留时间和鲁棒耐久性，与2D材料异质结构相当。此外，我们展示了具有激光功率控制的存储电荷和开/关比的电荷存储器的光学操纵。由理论模型支持，我们发现非易失性电荷存储器源自表面/界面被困电子，通过光产生的孔除去。我们的可光调非易失性充电内存器件，具有简单的结构，为大规模集成和高速智能电子产品铺平了途径，如超超速操作数据编码，人工突触和神经元。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号