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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Spin excitations in laser-molecular-beam epitaxy-grown nanosized YIG films: towards low relaxation and desirable magnetization profile
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Spin excitations in laser-molecular-beam epitaxy-grown nanosized YIG films: towards low relaxation and desirable magnetization profile

机译：激光分子束外延生长纳米型YIG膜的旋转激发：朝向低松弛和理想的磁化分布

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摘要

We describe the synthesis of nanosized Y3Fe5O12 (YIG) films grown by laser-molecular-beam epitaxy on Gd3Ga5O12 (GGG) and Nd3Ga5O12 (NdGG) substrates with (111) orientation and present the results of ferromagnetic resonance (FMR) and spin-wave propagation studies in these heterostructures. It is found that the magnetic parameters of YIG films grown on NdGG and GGG substrates are considerably different. FMR spectra of YIG/NdGG structures are characterized by a large number of narrow peaks, while FMR spectra of YIG/GGG structures consist of a small number of peaks or one peak. The effective magnetization of YIG films grown on NdGG substrates is less than that of YIG films grown on GGG and is more sensitive to the growth conditions. A lateral inhomogeneity of YIG/NdGG structures is observed in spin-wave propagation experiments. For YIG/NdGG and YIG/GGG structures, the FMR linewidth Delta H of a single peak sharply increases with temperature decrease from 298 to 67 K. The observed increase of Delta H is explained by typical relaxation processes caused by the presence of Fe2 + ions. From the spin-wave propagation study, it is also found that the relaxation of spin-waves explains only a minor part of the FMR single-peak linewidth in YIG/NdGG structures. On the basis of the obtained results, YIG/GGG/semiconductor- and YIG/NdGG/semiconductor-heterostructures with expected low spin-wave relaxation and desirable effective magnetization profile are proposed.
机译：通过在Gd3Ga5O12（GGG）和Nd3Ga5O12（NDGG）基板上的激光分子束外延生长的纳米型Y3Fe5O12（YIG）膜的合成，具有（111）取向并呈现铁磁共振（FMR）和旋转波传播的结果这些异质结构研究。发现在NDGG和GGG基板上生长的YIG膜的磁性参数显着不同。 YIG / NDGG结构的FMR光谱特征在于大量窄峰，而YIG / GGG结构的FMR光谱由少量峰或一个峰组成。在NDGG底物上生长的YIG膜的有效磁化小于GGG上生长的YIG薄膜的磁性磁性磁化薄膜，对生长条件更敏感。在旋转波传播实验中观察到YIG / NDGG结构的横向偏置性。对于YIG / NDGG和YIG / GGG结构，单峰的FMR线宽ΔH急剧增加，从298到67 K急剧增加。通过Fe2 +离子的存在引起的典型松弛过程解释了Delta H的观察到增加。从旋转波传播研究中，还发现旋转波的松弛仅在YIG / NDGG结构中仅解释了FMR单峰宽度的次要部分。在得到的结果的基础上，提出了具有预期低自旋波弛豫和理想的有效磁化分布的YIG / GGG /半导体 - 和YIG / NDGG /半导体异质结构。

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