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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >The hole transport mechanism of MoOx/a-Si: H(i)/n-Si heterojunction photovoltaic devices: the source of the 'S-shaped' behavior
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The hole transport mechanism of MoOx/a-Si: H(i)/n-Si heterojunction photovoltaic devices: the source of the 'S-shaped' behavior

机译：MOOX / A-Si：H（i）/ n-Si异质结的空穴传输机制：“S形”行为的源

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摘要

For the purpose of introducing a high work-function layer to improve the implied voltage in asymmetric silicon-based heterojunction photovoltaic devices, molybdenum oxide (MoOx, 0 < x < 3) is applied to the device. However, besides the role of extracting holes on one side, another singularity behavior presented itself in the nonequilibrium state, i.e. a worsened photovoltaic peformance (an 'S-shape') of current density versus voltage (J-V) was revealed with an inappropriate chemical state of the MoO(x)film. The source of the 'S-shaped' behavior of an MoOx/a-Si: H(i)/n-Si heterojunction device was co-analyzed by x-ray photoelectron spectroscopy with depth profiling, ultraviolet photoelectron spectroscopy, current density-voltage representation, a minority carrier lifetime survey and automat for simulation of heterostructures software simulation. It was found that an amorphous SiO(x)interlayer was spontaneously formed during the deposition of MoO(x)film onto a-Si: H(i)/n-Si substrate, blocking the transport of holes. The decrease in the work-function of the MoO(x)layer is attributed to an oxidation reaction at the MoOx/a-Si: H(i) boundary zone, which results in the decline of hole selectivity. A rising O/Si ratio in the SiO(x)interlayer induces an augmentation of valence band offsets, which could be the best interpretation of the 'S-shaped' response, because of a barrier that hinders the thermionic emission of holes. Meanwhile, the thicker (>4 nm) SiO(x)layer leads to a lower tunneling probability for holes. The characteristic analysis of the MoOx/a-Si: H(i)/n-Si heterojunction device deepens the understanding of the hole transport mechanism of the device.
机译：为了引入高功函数层以改善不对称硅的异质结光伏器件中的暗示电压，将氧化钼（MOOX，0 4nm）siO（x）层导致孔的较低隧道概率。 MOOX / A-Si：H（i）/ n-Si异质结装置的特征分析加深了对装置的空穴传输机构的理解。

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