Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM

Lin Shih-Kai; Wu Cheng-Hsien; Chen Min-Chen; Chang Ting-Chang; Lien Chen-Hsin; Xu You-Lin; Tseng Yi-Ting; Wu Pei-Yu; Tan Yung-Fang; Sun Li-Chuan; Zhang Yong-Ci; Huang Jen-Wei; Sze Simon M.

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Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM

机译：基于HFO2的RRAM中电极导热性对高电阻状态水平的影响

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This study examines the influence of different electrode thermal conductivity on switching behavior during the reset process. Electrical analysis methods and an analysis of current conduction mechanism indicate that better thermal conductivity in the electrode will require larger input power in order to induce more active oxygen ions to take part in the reset process. More active oxygen ions result in a more oxidized switching layer, and cause the effective switching gap (d(sw)) to become larger in the reset process. The effect of the electrode thermal conductivity and input power are explained by our model and clarified by electrical analysis methods.

机译：本研究研究了在复位过程中不同电极热导率对切换行为的影响。电气分析方法和电流传导机构的分析表明电极中的更好的导热性需要更大的输入功率，以诱导更活跃的氧离子参与复位过程。更活跃的氧离子导致更氧化的开关层，并使有效的切换间隙（D（SW））变得更大的复位过程。电极导热率和输入功率的效果由我们的模型解释并通过电气分析方法阐明。

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来源
《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2020年第39期|共7页
作者
Lin Shih-Kai; Wu Cheng-Hsien; Chen Min-Chen; Chang Ting-Chang; Lien Chen-Hsin; Xu You-Lin; Tseng Yi-Ting; Wu Pei-Yu; Tan Yung-Fang; Sun Li-Chuan; Zhang Yong-Ci; Huang Jen-Wei; Sze Simon M.;
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作者单位

Natl Tsing Hua Univ Inst Elect Engn Hsinchu 30013 Taiwan;

Natl Sun Yat Sen Univ Dept Mat &

Optoelect Sci Kaohsiung 80424 Taiwan;

Natl Sun Yat Sen Univ Dept Phys Kaohsiung 80424 Taiwan;

Natl Sun Yat Sen Univ Dept Phys Kaohsiung 80424 Taiwan;

Natl Tsing Hua Univ Inst Elect Engn Hsinchu 30013 Taiwan;

Natl Sun Yat Sen Univ Dept Mat &

Optoelect Sci Kaohsiung 80424 Taiwan;

Natl Sun Yat Sen Univ Dept Phys Kaohsiung 80424 Taiwan;

Natl Sun Yat Sen Univ Dept Mat &

Optoelect Sci Kaohsiung 80424 Taiwan;

Natl Sun Yat Sen Univ Dept Mat &

Optoelect Sci Kaohsiung 80424 Taiwan;

Natl Sun Yat Sen Univ Dept Mat &

Optoelect Sci Kaohsiung 80424 Taiwan;

Natl Sun Yat Sen Univ Dept Mat &

Optoelect Sci Kaohsiung 80424 Taiwan;

ROC Mil Acad Dept Phys Kaohsiung 83059 Taiwan;

Natl Chiao Tung Univ Dept Elect Engn Hsinchu 30013 Taiwan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
resistance random access memory (RRAM); reset behavior; thermal conductivity; oxygen ions; switching region;

机译：阻力随机存取存储器（RRAM）;复位行为;导热率;氧离子;切换区域;

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专利

1. Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM [J] . Lin Shih-Kai, Wu Cheng-Hsien, Chen Min-Chen, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2020,第39期

机译：基于HFO2的RRAM中电极导热性对高电阻状态水平的影响
2. The through-plane thermal conductivity and the contact resistance of the components of the membrane electrode assembly and gas diffusion layer in proton exchange membrane fuel cells [J] . N. Alhazmi, D.B. Ingham, M.S. Ismail, Journal of power sources . 2014,第deca15期

机译：质子交换膜燃料电池中膜电极组件和气体扩散层各组件的贯穿面热导率和接触电阻
3. The in-plane thermal conductivity and the contact resistance of the components of the membrane electrode assembly in proton exchange membrane fuel cells [J] . N. Alhazmi, M.S. Ismail, D.B. Ingham, Journal of power sources . 2013,第NOVa1期

机译：质子交换膜燃料电池中膜电极组件各部件的面内导热系数和接触电阻
4. Impact of Forming Pulse Geometry and Area Scaling on Forming Kinetics and Stability of the Low Resistance State in HfO2-Based RRAM Cells [C] . Lorenzi P., Rao R., Irrera F. Memory Workshop (IMW), 2012 4th IEEE International . 2012

机译：形成脉冲的几何形状和面积缩放对基于HfO2的RRAM单元中低电阻状态的形成动力学和稳定性的影响
5. The Effects of Proton Radiation on HfO2-Based RRAM [D] . Xue, Panpan 2018

机译：质子辐射对基于HfO2的RRAM的影响
6. Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment [O] . Fang-Yuan Yuan, Ning Deng, Chih-Cheng Shih, 2017

机译：氮化处理基于HfO2的RRAM的导电机理和提高的耐力
7. THERMAL CONDUCTIVITY AND BOUNDARY RESISTANCE MEASUREMENTS OF GeSbTe AND ELECTRODE MATERIALS USING NANOSECOND THERMOREFLECTANCE [O] . E. Bozorg-grayeli, J. P. Reifenberg, K. W. Chang, 2014

机译：纳米热电偶对GesbTe和电极材料的热导率和边界电阻测量
8. Thermal Conductivity and Water Vapor Stability of Ceramic HfO2-Based Coating Materials [R] . Zhu, Dong-Ming, Fox, Dennis S., Bansal, Narottam P., 2004

机译：陶瓷HfO2基涂层材料的导热系数和水蒸汽稳定性

Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM

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