...
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Room-temperature magnetoelectricity and magnetic field sensing characteristics of 2-2 phase connected Ni-Mn-In/PLZT layered multiferroic heterostructure
【24h】

Room-temperature magnetoelectricity and magnetic field sensing characteristics of 2-2 phase connected Ni-Mn-In/PLZT layered multiferroic heterostructure

机译:室温磁电和磁场检测特性为2-2相位连接的Ni-Mn-In / PLZT分层多二种异质结构

获取原文
获取原文并翻译 | 示例
           

摘要

The present study explores the systematic investigation of magnetoelectric coupling and magnetic field sensing characteristics of 2-2 layered Ni50Mn35In15/Pb0.96La0.04(Zr0.52Ti0.48) O-3 (Ni-Mn-In/PLZT) multiferroic heterostructure fabricated over Si substrate via DC/RF magnetron sputtering technique. The temperature-dependent dielectric constant curve depicts a typical hump-like structure in the temperature range of 266-283K, which overlaps with the Ni-Mn-In martensite transformation region. The magnetoelectric coupling coefficient (alpha(ME)) as a function of crucial factors such as DC bias magnetic field, AC magnetic field and its frequency are also analyzed and well explained. A alpha(ME) of similar to 1.2 V cm(-1) Oe is observed at similar to 400 Oe bias magnetic field. The multiferroic heterostructure exhibits excellent magnetic field sensing parameters with sensitivity, correlation coefficient (r(2)), hysteresis and inaccuracy of similar to 0.58 mV Oe(-1), 0.9992, 1.46% full-scale output (FSO) and 2.4% FSO, respectively. Such Si-integrated Ni-Mn-In/PLZT thin-film-based multiferroic heterostructures are useful for magnetic field sensing and nanoelectromechanical system device applications at room temperature.
机译:本研究探讨了磁电耦合和磁场感测特性的系统研究2-2分层Ni50mN35In15 / Pb0.96La0.04(Zr0.52Ti0.48)O-3(Ni-Mn-In / PLZT)的多体性异质结构。 Si基板通过DC / RF磁控溅射技术。温度依赖性介电常数曲线描绘了266-283K的温度范围内的典型驼峰状结构,其与Ni-Mn-Martensite转化区域重叠。还分析了磁电耦合系数(α(ME))作为诸如DC偏置磁场,交流磁场及其频率的关键因素的函数,并解释得很好。在类似于400 OE偏置磁场的情况下观察到类似于1.2Vcm(-1)OE的α(ME)。多法性异质结构具有优异的磁场感测参数,具有灵敏度,相关系数(R(2)),滞后和类似于0.58 mV OE(-1),0.9992,1.46%满量程输出(FSO)和2.4%FSO的滞后和不准确性, 分别。这种Si-综合的Ni-Mn-In / PLZT薄膜的多体性异质结构可用于室温的磁场感测和纳米机电系统装置。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号