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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Band-fluctuations model for the fundamental absorption of crystalline and amorphous semiconductors: a dimensionless joint density of states analysis
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Band-fluctuations model for the fundamental absorption of crystalline and amorphous semiconductors: a dimensionless joint density of states analysis

机译：结晶和无定形半导体的根本吸收的带波动模型：状态分析的无量纲关节密度

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摘要

We develop a band-fluctuations model which describes the absorption coefficient in the fundamental absorption region for direct and indirect electronic transitions in disordered semiconductor materials. The model accurately describes both the Urbach tail and absorption edge regions observed in such materials near the mobility edge in a single equation with only three fitting parameters. An asymptotic analysis leads to the universally observed exponential tail below the bandgap energy and to the absorption edge model at zero Kelvin above it, for either direct or indirect electronic transitions. The latter feature allows the discrimination between the absorption edge and absorption tails, thus yielding more accurate bandgap values when fitting optical absorption data. We examine the general character of the model using a dimensionless joint density of states formalism with a quantitative analysis of a large amount of optical absorption data. Both heavily doped p-type GaAs and nano-crystalline Ga1-xMnxN, as examples for direct bandgap materials, as well as amorphous Si:H-x, SiC:H-x and SiNx, are modeled successfully with this approach. We contrast our model with previously reported empirical models, showing in our case a suitable absorption coefficient shape capable of describing various distinct materials while also maintaining the universality of the exponential absorption tail and absorption edge.
机译：我们开发这描述了在基本吸收区域的吸收系数为无序的半导体材料的直接和间接的电子跃迁的带波动模型。该模型准确地描述无论在这样的材料观察到附近的移动性边缘在一个单一的方程只有三个拟合参数为：Urbach尾部和吸收边缘的区域。渐近分析导致下面的带隙能量，并在零开尔文它上面的吸收边缘模型中的普遍观察到的指数尾，用于直接或间接电子跃迁。后者功能允许吸收边缘和吸收尾部之间的辨别，从而拟合光吸收数据时，得到更准确的带隙值。我们研究使用状态形式主义的一个无量纲的联合密度用大量的光吸收数据的定量分析模型的一般性质。两个重掺杂p型GaAs和纳米晶GA1-xMnxN，作为用于直接带隙材料，以及非晶Si的例子：H-X，碳化硅：H-X x和SiN x，用这种方法成功地建模。我们对比我们的模型与先前报告的经验模型，在我们的情况下，示出了能够描述各种不同的材料，同时也保持指数吸收和尾吸收边的普遍性的合适吸收系数形状。

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