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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Tuning of interfacial perpendicular magnetic anisotropy and domain structures in magnetic thin film multilayers
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Tuning of interfacial perpendicular magnetic anisotropy and domain structures in magnetic thin film multilayers

机译：磁性薄膜多层界面垂直磁各向异性和畴结构的调整

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摘要

We investigate the magnetic domain structures and the perpendicular magnetic anisotropy (PMA) arising in CoFeB films interfaced with selected heavy metal (HM) layers with large spin Hall angles in HM/CoFeB/MgO (HM = W, Pt, Pd, WxTa1-x) stacks as a function of CoFeB thickness and composition for both as-deposited and annealed materials stacks. The coercivity and the anisotropy fields of annealed material stacks are higher than for the as-deposited stacks due to crystallisation of the ferromagnetic layer. Generally a critical thickness of MgO > 1 nm provides adequate oxide formation at the top interface as a requirement for the generation of PMA. We demonstrate that in stacks with Pt as the HM, the PMA depends crucially on the alloy composition of the ferromagnet requiring a Co rich alloy to achieve PMA, i.e. it is important to have a large number of Pt-Co hybrid bonds at the interface compared to Pt-Fe hybrid bonds. In Pd/CoFeB/MgO layers, we observe for appropriate PMA a special stripe domain configuration that also includes circular skyrmion-like spin structures. Three different means of selective tuning of the PMA are discussed apart from the conventional FM thickness variation: Changing the number of repetitions of a multilayer stack is shown to change the PMA and strong PMA is found for certain compositions of WxTa1-x that also result in very low coercive fields (<1 mT) of the CoFeB. The PMA has also been shown to be tuned via annealing, very strong anisotropy fields of up to 1 T and low pinning of domain structures were measured in W/CoFeB/MgO, making these multilayers stacks a promising candidate for MRAM development.
机译：我们研究了在HM / CoFeB / MgO中的大型旋转霍尔角接合的CoFeB膜中产生的磁畴结构和垂直磁各向异性（PMA），其中HM / CoFeB / MgO中的大型旋转霍尔角（HM = W，Pt，Pd，Wxta1-x ）堆叠作为沉积和退火材料叠层的CoFeB厚度和组合物的函数。由于铁磁层的结晶，退火材料堆叠的矫顽力和各向异性场高于沉积的堆叠。通常，MgO> 1nm的临界厚度在顶部界面处提供足够的氧化物形成，例如对PMA产生的要求。我们证明，在具有Pt的堆叠作为HM的堆叠中，PMA至关重要地依赖于需要CO Rich合金的铁圆环的合金组合物，以实现PMA，而是在界面处具有大量PT-CO混合键是重要的到PT-FE杂交键。在PD / CoFeB / MgO层中，我们观察适当的PMA A特殊条纹域配置，还包括圆形斯基硫芯型自旋结构。除了传统的FM厚度变化之外，还讨论了PMA的三种不同选择性调谐方法：改变了多层堆叠的重复次数，显示出改变PMA和强PMA，对于其中产生的某些组合物也是如此CofeB的非常低的矫顽田（<1毫秒）。通过退火还显示PMA，在W / CoFeB / MgO中测量了高达1 T的非常强大的各向异性场，可在W / CoFeB / MgO中测量域结构的低钉扎，使得这些多层堆叠MRAM发育的有希望的候选者。

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