Solution-processed high-k dielectrics for improving the performance of flexible intrinsic Ge nanowire transistors: dielectrics screening, interface engineering and electrical properties

Lou Xun; Zhang Wenfeng; Xie Zijian; Yang Li; Yu Xu; Liu Yuan; Chang Haixin

首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Solution-processed high-k dielectrics for improving the performance of flexible intrinsic Ge nanowire transistors: dielectrics screening, interface engineering and electrical properties

【24h】

Solution-processed high-k dielectrics for improving the performance of flexible intrinsic Ge nanowire transistors: dielectrics screening, interface engineering and electrical properties

机译：解决方案加工的高k电介质，用于提高柔性固有电气纳米线晶体管的性能：电介质筛选，接口工程和电气性能

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Although Ge-based CMOS have attracted sustained research interest for scaling beyond the Si CMOS limitation, Ge-based flexible electronics are still rarely discussed. For Ge-based flexible electronics, seeking proper dielectrics-both with excellent dielectric/Ge interface quality and special temperature compatibility with the polymer supports in the manufacturing process-is still the main challenge. In addition, focusing on solution-processed high-k dielectrics instead of vacuum fabrication technology is a particular concern. Here, we report on our systematic efforts to improve the device performance of flexible intrinsic Ge nanowire transistors on a polyimide substrate with solution-processed high-k dielectric films. Firstly, YOx thin film was determined to be the most suitable candidate among various solution-processed high-k dielectrics (ZrOx, HfOx, TiOx, AlOx, YOx and LaOx) due to its most promising electrical properties, surface roughness and process temperature. Secondly, the excellent YOx/Ge interface quality was successfully achieved under optimized conditions with a precursor solution concentration of 0.2 M, an annealing temperature of 500 degrees C and an O-2 annealing atmosphere. Ultimately, benefitting from proper dielectric screening and interface engineering, single intrinsic flexible Ge nanowire transistors were demonstrated, exhibiting excellent operating characteristics comparable to devices on rigid substrates. The devices further show good stability, implying their great potential in flexible electronics.

机译：尽管基于GE的CMOS吸引了超越SI CMOS限制的缩放持续研究兴趣，但基于GE的柔性电子器件仍然很少讨论。对于基于GE的柔性电子器件，寻求适当的电介质 - 既具有优异的电介质/ GE界面质量和特殊的温度兼容，与制造过程中的聚合物支撑件 - 仍然是主要挑战。此外，专注于解决方案加工的高k电介质而不是真空制造技术是特别关注的。在此，我们报告了我们的系统努力，以改善具有溶液加工的高k电介质膜的聚酰亚胺基板上的柔性固有GE纳米线晶体管的装置性能。首先，由于其最有前景的电性能，表面粗糙度和工艺温度，确定了yox薄膜是各种溶液加工高k电介质（ZrOx，HFOX，TiOx，Alox，Yox和Laox）中最合适的候选物。其次，在优化条件下成功实现了优异的yox / Ge界面质量，前体溶液浓度为0.2μm，退火温度为500℃和O-2退火气氛。最终，从适当的介电屏蔽和界面工程中受益，对单一内在柔性GE纳米线晶体管进行说明，表现出与刚性基板上的装置相当的优异操作特性。该器件进一步显示出良好的稳定性，暗示它们在柔性电子器件中的巨大潜力。

著录项

来源
《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2019年第50期|共11页
作者
Lou Xun; Zhang Wenfeng; Xie Zijian; Yang Li; Yu Xu; Liu Yuan; Chang Haixin;
展开▼
作者单位

Huazhong Univ Sci &

Technol Sch Mat Sci &

Engn State Key Lab Mat Proc &

Die &

Mould Technol Ctr Joining &

Elect Packaging Wuhan 430074 Hubei Peoples R China;

Huazhong Univ Sci &

Technol Sch Mat Sci &

Engn State Key Lab Mat Proc &

Die &

Mould Technol Ctr Joining &

Elect Packaging Wuhan 430074 Hubei Peoples R China;

Huazhong Univ Sci &

Technol Sch Mat Sci &

Engn State Key Lab Mat Proc &

Die &

Mould Technol Ctr Joining &

Elect Packaging Wuhan 430074 Hubei Peoples R China;

Huazhong Univ Sci &

Technol Sch Mat Sci &

Engn State Key Lab Mat Proc &

Die &

Mould Technol Ctr Joining &

Elect Packaging Wuhan 430074 Hubei Peoples R China;

Huazhong Univ Sci &

Technol Sch Mat Sci &

Engn State Key Lab Mat Proc &

Die &

Mould Technol Ctr Joining &

Elect Packaging Wuhan 430074 Hubei Peoples R China;

Huazhong Univ Sci &

Technol Sch Mat Sci &

Engn State Key Lab Mat Proc &

Die &

Mould Technol Ctr Joining &

Elect Packaging Wuhan 430074 Hubei Peoples R China;

Huazhong Univ Sci &

Technol Sch Mat Sci &

Engn State Key Lab Mat Proc &

Die &

Mould Technol Ctr Joining &

Elect Packaging Wuhan 430074 Hubei Peoples R China;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
solution process; nanowire; flexible electronics; Ge-based devices; high-k dielectrics;

机译：溶液过程;纳米线;柔性电子;基于GE的设备;高k电介质;

相似文献

外文文献
中文文献
专利

1. Solution-processed high-k dielectrics for improving the performance of flexible intrinsic Ge nanowire transistors: dielectrics screening, interface engineering and electrical properties [J] . Lou Xun, Zhang Wenfeng, Xie Zijian, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2019,第50期

机译：解决方案加工的高k电介质，用于提高柔性固有电气纳米线晶体管的性能：电介质筛选，接口工程和电气性能
2. Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness [J] . Journal of Applied Physics . 2010,第3期

机译：高k Al2O3介电层厚度变化的ZnO纳米线场效应晶体管的电性能
3. Electrical properties of ZnO nanowire field effect transistors with varying high-k AI_2O_3 dielectric thickness [J] . Minhyeok Choe, Gunho Jo, Jongsun Maeng, Journal of Applied Physics . 2010,第3期

机译：高k AI_2O_3介电层厚度变化的ZnO纳米线场效应晶体管的电性能
4. Improved Device Performance of MoTe2 nanoribbon Transistors with Solution-processed Ternary HfAlOx High-k Dielectric [C] . Yuan Liu, Zijian Xie, Li Yang, IEEE International Conference on Solid-State and Integrated Circuit Technology . 2020

机译：利用溶液加工三元Hfalox高k电介质改进了Mote2纳米孔晶体管的装置性能
5. Low-voltage Organic Thin Film Transistors (OTFTs) with Solution-processed High-k Dielectric cum Interface Engineering. [D] . Su, Yaorong. 2013

机译：低压有机薄膜晶体管（OTFT），具有溶液处理的高k介电层和界面工程。
6. Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing [O] . Esther Lee, Tae Hyeon Kim, Seung Won Lee, 2019

机译：通过后退火实现具有高k Al2O3栅极电介质的溶胶-凝胶IGZO晶体管的电气性能的改善
7. Low-voltage organic thin film transistors (OTFTs) with solution-processed high-k dielectric cum interface engineering. [O] . 2013

机译：低压有机薄膜晶体管（OTFT），采用溶液处理的高k电介质和界面工程。

Solution-processed high-k dielectrics for improving the performance of flexible intrinsic Ge nanowire transistors: dielectrics screening, interface engineering and electrical properties

摘要

著录项

相似文献

相关主题

期刊订阅