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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer
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Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer

机译：基于磷化铟的太阳能电池，使用超薄ZnO作为电子选择层

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According to the Shockley-Queisser limit, the maximum achievable efficiency for a single junction solar cell is similar to 33.2% which corresponds to a bandgap (E-g) of 1.35 eV (InP). However, the maximum reported efficiency for InP solar cells remain at 24.2% +/- 0.5%, that is >25% below the standard Shockley-Queisser limit. Through a wide range of simulations, we propose a new device structure, ITO/ ZnO/i-InP/p(+) InP (p-i-ZnO-ITO) which might be able to fill this efficiency gap. Our simulation shows that the use of a thin ZnO layer improves passivation of the underlying i-InP layer and provides electron selectivity leading to significantly higher efficiency when compared to their n(+)/i/p(+) homojunction counterpart. As a proof-of-concept, we fabricated ITO/ZnO/i-InP solar cell on a p(+) InP substrate and achieved an open-circuit voltage (V-oc) and efficiency as high as 819 mV and 18.12%, respectively, along with similar to 90% internal quantum efficiency. The entire device fabrication process consists of four simple steps which are highly controllable and reproducible. This work lays the foundation for a new generation of thin film InP solar cells based solely on carrier selective heterojunctions without the requirement of extrinsic doping and can be particularly useful when p- and n-doping are challenging as in the case of III-V nanostructures.
机译：根据Shockley-exeisser限制，单个结太阳能电池的最大可实现效率类似于33.2％，其对应于1.35eV（InP）的带隙（E-G）。然而，InP太阳能电池的最大报告效率仍然为24.2％+/- 0.5％，即低于标准Shockley-Queisser限制的25％。通过各种仿真，我们提出了一种新的设备结构，ITO / ZnO / I-INP / P（+）INP（P-I-ZnO-ITO），其可能能够填充这种效率差距。我们的仿真表明，使用薄ZnO层的使用改善了底层I-INP层的钝化，并提供电子选择性，与其N（+）/ I / P（+）同时结相比，效率明显更高。作为概念验证，我们在AP（+）INP基板上制造了ITO / ZnO / I-INP太阳能电池，并分别实现了高达819 mV和18.12％的开路电压（V-OC）和效率，以及类似于90％的内部量子效率。整个器件制造过程由四个简单的步骤组成，这是高度可控和可再现的。这项工作为新一代薄膜INP太阳能电池仅基于载体选择性异质结，而不需要外在掺杂，并且当P-和N掺杂挑战时可能特别有用，因为在III-V纳米结构的情况下。

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