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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions
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Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

机译：GaAs隧道连接中插入的低和交错间隙量子孔的影响

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摘要

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green's function formalism and a 6-band k. p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm(-2) range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.
机译：在本文中，我们研究了I InGaAs或II型InGaAs / Gaassb量子的影响对MBE-生长的GaAs隧道结（TJ）的性能的影响。使用基于非平衡绿色功能形式主义和6频段K的量子传输模型设计和模拟设备。 P Hamiltonian。我们通过在连接接口插入InGaAs QW时，通过对中间掺杂GaAs Tj进行460倍的异质结构上的峰值隧道电流密度的显着改进。在结接口处，高度掺杂的GaAs Tj集成的3倍改善I型IngaAs / Gaassb QW。因此，交错带阵列异质结构的简单插入使我们能够达到高于KA cm（-2）范围的隧道电流，相当于Si-掺杂GaAs TJ的最佳效果，这暗示了基于TJ的组件的非常有趣的电位，例如多结太阳能电池，垂直腔表面发射激光器和隧道场效应晶体管。

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