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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Room-temperature fabrication of bilayer InZnO:Li/MgZnO: Li thin film transistors using radio frequency magnetron sputtering
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Room-temperature fabrication of bilayer InZnO:Li/MgZnO: Li thin film transistors using radio frequency magnetron sputtering

机译：双层inzno的室温制作：Li / Mgzno：Li薄膜晶体管使用射频磁控溅射

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摘要

In this work the authors present a study aiming to introduce the bilayer InZnO:Li/MgZnO:Li channel to increase the characteristics of thin film transistors. And the authors utilized radio frequency magnetron sputtering technology to design and fabricate the electronic devices at room temperature. All the proposed devices showed smooth surfaces, which have a positive effect on the TFT's performance. Besides, x-ray diffraction pattern analysis was performed to investigate the microstructure of InZnO: Li/MgZnO: Li films. Finally, the corresponding bilayer InZnO:Li/MgZnO: Li thin film transistors without thermal annealing treatment showed a superior performance which can rival that of current thin film transistors extensively applied in display industry; specifically, a saturation mobility of 25.2 cm(2) V-1 s(-1), a low threshold voltage of 5.7 V and a large on/off current ratio of 1.5 x 10(7).
机译：在这项工作中，作者展示了一个旨在引入双层Inzno：Li / Mgzno：Li通道的研究，以增加薄膜晶体管的特性。 作者利用射频磁控溅射技术在室温下设计和制造电子设备。 所有提出的设备都显示出光滑的表面，对TFT的性能产生积极影响。 此外，进行X射线衍射图案分析以研究inzno：li / mgzno：li膜的微观结构。 最后，相应的双层Inzno：Li / Mgzno：Li / Mgzno：Li薄膜晶体管没有热退火处理，表现出优异的性能，可以媲美电流薄膜晶体管广泛应用于显示器行业中的竞争力; 具体地，饱和迁移率为25.2cm（2）V-1s（-1），低阈值电压为5.7V，较大的开/关电流比为1.5×10（7）。

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  • 作者

    Tian Longjie; Ma Yaobin; Wang Qi; Li Ran; Dai Shiqian; Zhou Dongzhan; Zhang Xiqing; Wang Yongsheng;

  • 作者单位

    Beijing Jiaotong Univ Key Lab Luminescence &

    Opt Informat Minist Educ Inst Optoelect Technol Beijing 100044 Peoples R China;

    Beijing Jiaotong Univ Key Lab Luminescence &

    Opt Informat Minist Educ Inst Optoelect Technol Beijing 100044 Peoples R China;

    Beijing Jiaotong Univ Key Lab Luminescence &

    Opt Informat Minist Educ Inst Optoelect Technol Beijing 100044 Peoples R China;

    Beijing Jiaotong Univ Key Lab Luminescence &

    Opt Informat Minist Educ Inst Optoelect Technol Beijing 100044 Peoples R China;

    Beijing Jiaotong Univ Key Lab Luminescence &

    Opt Informat Minist Educ Inst Optoelect Technol Beijing 100044 Peoples R China;

    Beijing Jiaotong Univ Key Lab Luminescence &

    Opt Informat Minist Educ Inst Optoelect Technol Beijing 100044 Peoples R China;

    Beijing Jiaotong Univ Key Lab Luminescence &

    Opt Informat Minist Educ Inst Optoelect Technol Beijing 100044 Peoples R China;

    Beijing Jiaotong Univ Key Lab Luminescence &

    Opt Informat Minist Educ Inst Optoelect Technol Beijing 100044 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学;
  • 关键词

    thin film transistors; electrical characteristics; the bilayer channel; room temperature;

    机译：薄膜晶体管;电气特性;双层通道;室温;

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