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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Novel modeling and dynamic simulation of magnetic tunnel junctions for spintronic sensor development
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Novel modeling and dynamic simulation of magnetic tunnel junctions for spintronic sensor development

机译：磁隧道交界处进行磁隧道开发的新型建模与动态仿真

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摘要

Spintronic magnetic sensors with the integration of magnetic materials and microstructures have been enabling people to make use of the electron spin and charge properties in many applications. The high demand for such sensors has in turn spurred the technology developments in both novel materials and their atomic-level controls. Few works, however, have been carried out and reported thus far in modeling and simulation of these spintronic magnetic sensing units based on magnetic tunnel junction (MTJ) technology. Accordingly, this paper proposes a novel modeling approach as well as an iterative simulation methodology for MTJs. A more comprehensive electrical tunneling model is established for better interpreting the conductance and current generated by the electron tunneling, and this model can also facilitate the iterative simulation of the micromagnetic dynamics. Given the improved tunneling model as well as the updated dynamic simulation, the electric characteristics of an MTJ with an external magnetic field can be conveniently computed, which provides a reliable benchmark for the future development of novel spintronic magnetic sensors.
机译：具有磁性材料和微观结构集成的闪光灯磁传感器使人们能够在许多应用中使用电子旋转和电荷性能。对这种传感器的高需求反过来促使了新颖材料及其原子水平控制中的技术发展。然而，已经在基于磁隧道结（MTJ）技术的这些闪渠磁感测单元的建模和模拟中进行了很少的作用。因此，本文提出了一种新颖的建模方法以及MTJS的迭代仿真方法。建立一种更全面的电隧道模型，以便更好地解释电子隧道产生的电导和电流，并且该模型还可以促进微磁动力学的迭代模拟。鉴于改进的隧道模型以及更新的动态仿真，可以方便地计算具有外部磁场的MTJ的电特性，这为新颖的闪光磁传感器的未来发展提供了可靠的基准。

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