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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Hydrogenated ZnO thin film with p-type surface conductivity from plasma treatment
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Hydrogenated ZnO thin film with p-type surface conductivity from plasma treatment

机译:氢化ZnO薄膜,具有p型表面电导率的血浆处理

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Fabrication of a ZnO p-n homojunction within a single structure by a simple process is a challenging task. In this work, an intrinsic p-type surface conductive layer of ZnO with a controlled concentration of holes over n-type conductive bulk was obtained by a one-step room-temperature process via hydrogen plasma treatment. Non-contact surface sensitive techniques, such as Kelvin probe force microscopy and conductive force atomic microscopy, confirmed the existence of surface p-type conductivity through analyzing the distribution and concentration of charge carriers on the topmost surface of hydrogenated ZnO. A theoretical framework was constructed to provide a rationale of the p-type surface conductivity and justify its relation to the treatment time. It is believed that this finding will open a new possibility for the fabrication of ZnO based p-n junction devices.
机译:通过简单的过程在单个结构内制造ZnO P-N同质结的是一个具有挑战性的任务。 在这项工作中,通过通过氢等离子体处理通过一步室温方法获得具有通过N型导电体积的受控孔的ZnO的固有P型表面导电层。 非接触表面敏感技术,例如开尔文探针显微镜和导电力原子显微镜,证实了表面p型导电性的存在,通过分析氢化ZnO最顶表面上的电荷载体的分布和浓度。 构建理论框架以提供p型表面电导率的基本原理,并证明其与治疗时间的关系。 据信,该发现将开启基于ZnO的P-N结装置的制造的新可能性。

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