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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Improvement in negative bias illumination stress stability of In-Ga-Zn-O thin film transistors using HfO2 gate insulators by controlling atomic-layer-deposition conditions
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Improvement in negative bias illumination stress stability of In-Ga-Zn-O thin film transistors using HfO2 gate insulators by controlling atomic-layer-deposition conditions

机译：通过控制原子层沉积条件，通过HFO2栅极绝缘剂改善In-Ga-Zn-O薄膜晶体管的负偏置照明应力稳定性

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摘要

The effects of atomic layer deposition (ALD) conditions for the HfO2 gate insulators (GI) on the device characteristics of the InGaZnO (IGZO) thin film transistors (TFTs) were investigated when the ALD temperature and Hf precursor purge time were varied to 200, 225, and 250 degrees C, and 15 and 30 s, respectively. The HfO2 thin films showed low leakage current density of 10(-8) A cm(-2), high dielectric constant of over 20, and smooth surface roughness at all ALD conditions. The IGZO TFTs using the HfO2 GIs showed good device characteristics such as a saturation mobility as high as 11 cm(2) V-1 s(-1), a subthreshold swing as low as 0.10 V/dec, and all the devices could be operated at a gate voltage as low as +/- 3 V. While there were no marked differences in transfer characteristics and PBS stabilities among the fabricated devices, the NBIS instabilities could be improved by increasing the ALD temperature for the formation of HfO2 GIs by reducing the oxygen vacancies within the IGZO channel.
机译：当ALD温度和HF前体吹扫时间变化到200时，研究了HFO2栅极绝缘体（GI）对ingazno（IGZO）薄膜晶体管（TFT）的器件特性的原子层沉积（GI）的影响。分别为225和250℃和15和30秒。 HFO2薄膜显示出低漏电流密度为10（-8）厘米（-2），高介电常数超过20的介电常数，并且在所有ALD条件下的表面粗糙度平滑。使用HFO2 GIS的IGZO TFT显示出良好的器件特性，例如高达11cm（2）V-1 S（-1）的饱和迁移率，亚阈值摆动低至0.10 V / DEC，并且所有设备都可以在低至+/- 3V的栅极电压下操作。虽然制造的装置之间的转移特性和PBS稳定性没有明显的差异，但通过减少通过减少形成HFO2 GIS的ALD温度可以提高NBIS不稳定性IGZO通道内的氧气职位空缺。

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