...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics. Condensed Matter >Image charge models for accurate construction of the electrostatic self-energy of 3D layered nanostructure devices
【24h】

Image charge models for accurate construction of the electrostatic self-energy of 3D layered nanostructure devices

机译：图像电荷模型，用于精确构造3D层叠纳米结构装置的静电自能

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Efficient analytical image charge models are derived for the full spatial variation of the electrostatic self-energy of electrons in semiconductor nanostructures that arises from dielectric mismatch using semi-classical analysis. The methodology provides a fast, compact and physically transparent computation for advanced device modeling. The underlying semi-classical model for the self-energy has been established and validated during recent years and depends on a slight modification of the macroscopic static dielectric constants for individual homogeneous dielectric regions. The model has been validated for point charges as close as one interatomic spacing to a sharp interface. A brief introduction to image charge methodology is followed by a discussion and demonstration of the traditional failure of the methodology to derive the electrostatic potential at arbitrary distances from a source charge. However, the self-energy involves the local limit of the difference between the electrostatic Green functions for the full dielectric heterostructure and the homogeneous equivalent. It is shown that high convergence may be achieved for the image charge method for this local limit. A simple re-normalisation technique is introduced to reduce the number of image terms to a minimum. A number of progressively complex 3D models are evaluated analytically and compared with high precision numerical computations. Accuracies of 1% are demonstrated. Introducing a simple technique for modeling the transition of the self-energy between disparate dielectric structures we generate an analytical model that describes the self-energy as a function of position within the source, drain and gated channel of a silicon wrap round gate field effect transistor on a scale of a few nanometers cross-section. At such scales the self-energies become large (typically up to similar to 100 meV) close to the interfaces as well as along the channel. The screening of a gated structure is shown to reduce the self-energy relative to un-gated nanowires.
机译：在使用半古典分析中产生从介电失配的半导体纳米结构中电子的静电自能的全部空间变化来得出高效的分析图像电荷模型。该方法为先进的设备建模提供了快速，紧凑，物理透明的计算。近年来已经建立和验证了自我能量的底层半古典模型，并取决于各个均匀介电区域的宏观静电介质常数的轻微修改。该模型已被验证，因为点电荷与夏普界面一样接近。简要介绍了图像电荷方法，然后是讨论和演示方法的传统故障，从源费用从任意距离导出静电潜力。然而，自我能量涉及静电绿色功能与全介电异质结构和均匀当量之间的静电绿色功能之间的差异的局部极限。结果表明，对于该局部极限的图像电荷方法，可以实现高收敛性。引入简单的重新归一化技术以将图像术语的数量减少到最小值。分析和与高精度数值进行比较，评估了许多逐步复杂的3D模型。证明了1％的准确性。介绍一种简单的技术，用于在不同介电结构之间建模的自我能量的转变，我们产生描述自我能量的分析模型，该模型描述了硅包装圆形栅极效应晶体管的源极，漏极和门控通道的位置的函数在几纳米的横截面上。在这样的尺度上，自体能量变大（通常最多可达100 mev），靠近接口以及沿着通道。示出了屏蔽结构的筛选以减少相对于未栅极纳米线的自能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号