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The solvent treatment effect of the PEDOT:PSS anode interlayer in inverted planar perovskite solar cells

机译：PEDOT的溶剂处理效果：PSS阳极中间层倒置平面钙钛矿太阳能电池

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摘要

Inverted planar perovskite (PVSK) solar cells with a device structure of ITO/PEDOT:PSS/PVSK/PC61BM/Al have emerged as a new generation solar cell owing to their advantages of high power conversion efficiency (PCE), low processing temperature and potential low cost. In this paper, the polar solvent treatment effect of the PEDOT:PSS anode interlayer on PVSK solar cell performance was investigated. The conductivity of the PEDOT:PSS film was found to increase by washing with polar solvents, including H2O, ethanol (EtOH), and a mixture solvent of ethanol and H2O (EtOH : H2O = 8 : 2 v/v), which was attributed to the removal of the PSS component from the PEDOT:PSS film, leading to a PEDOT-rich surface. However, the PCE of perovskite solar cells decreased from 9.39% for the pristine PEDOT:PSS film based device to 4.21%, 8.35%, 7.13% for the H2O-, EtOH- and EtOH : H2O-treated PEDOT:PSS film based devices, respectively, suggesting that the high conductivity of the PEDOT:PSS film does not ensure a high device performance of the inverted PVSK solar cells. UV-Vis absorption spectra, AFM surface morphology and SEM images of the PVSK films deposited on different PEDOT:PSS surfaces were studied, and the results showed that PEDOT-rich surface is not favorable for the crystal growth of PVSK layer, and consequently leads to poor device performances. This conclusion was further supported by the improved device performance of PVSK solar cells based on a PEDOT:PSS/PSSNa anode buffer layer, where an additional poly(sodium p-styrenesulfonate) (PSSNa) layer was deposited on the PEOT:PSS surface.
机译：反转平面钙钛矿（PVSK）太阳能电池用ITO / PEDOT的器件结构：PSS / PVSK / PC 61 BM /铝已成为由于其的高功率转换效率（PCE），低加工温度和潜在优势的新一代的太阳能电池低成本。在本文中，PEDOT的极性溶剂处理效果：PSS阳极层间上PVSK太阳能电池的性能进行了研究。该PEDOT的电导率：PSS膜被发现通过用极性溶剂，包括H 2 O，乙醇（EtOH）洗涤，以增加，以及乙醇和H 2 O的混合溶剂（乙醇：水= 8:2 V / V），这是由于从PEDOT除去PSS组分：PSS膜，导致富PEDOT-表面。但是，钙钛矿太阳能电池的PCE从9.39％减少为原始PEDOT：PSS基于膜装置4.21％，8.35％，7.13％，为H 2 O，EtOH-和EtOH：H 2 O处理的PEDOT：PSS薄膜为基础的设备，分别，这表明PEDOT的高导电率：PSS膜不确保倒PVSK太阳能电池的高器件性能。 UV-Vis吸收光谱，原子力显微镜的表面形态，并沉积在不同PEDOT的PVSK膜的SEM图像：PSS表面进行了研究，结果表明，富PEDOT表面不是PVSK层的晶体生长，从而导致良好可怜的器件性能。 PSS / PSSNa转换阳极缓冲层，其中一个附加的聚（对苯乙烯磺酸钠）（PSSNa转换）层沉积在PEOT：：PSS表面这个结论是通过基于PEDOT PVSK的太阳能电池的改进装置性能的进一步支持。

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  • 来源
    《RSC Advances》 |2016年第29期|共7页
  • 作者

    Li Xue-Yuan; Zhang Lian-Ping; Tang Feng; Bao Zhong-Min; Lin Jian; Li Yan-Qing; Chen Liwei; Ma Chang-Qi;

  • 作者单位

    Chinese Acad Sci Collaborat Innovat Ctr Suzhou Nano Sci &

    Technol Printable Elect Res Ctr Suzhou Inst Nanotech &

    Nanobion SEID SIP 398 Ruoshui Rd Suzhou 215123 Jiangsu Peoples R China;

    Chinese Acad Sci Collaborat Innovat Ctr Suzhou Nano Sci &

    Technol Printable Elect Res Ctr Suzhou Inst Nanotech &

    Nanobion SEID SIP 398 Ruoshui Rd Suzhou 215123 Jiangsu Peoples R China;

    Chinese Acad Sci Collaborat Innovat Ctr Suzhou Nano Sci &

    Technol I Lab Suzhou Inst Nanotech &

    Nanobion SEID SIP 398 Ruoshui Rd Suzhou 215123 Jiangsu Peoples R China;

    Soochow Univ Collaborat Innovat Ctr Suzhou Nano Sci &

    Technol Inst Funct Nano &

    Soft Mat SEID SIP 199 Renai Rd Suzhou 215123 Jiangsu Peoples R China;

    Chinese Acad Sci Collaborat Innovat Ctr Suzhou Nano Sci &

    Technol Printable Elect Res Ctr Suzhou Inst Nanotech &

    Nanobion SEID SIP 398 Ruoshui Rd Suzhou 215123 Jiangsu Peoples R China;

    Soochow Univ Collaborat Innovat Ctr Suzhou Nano Sci &

    Technol Inst Funct Nano &

    Soft Mat SEID SIP 199 Renai Rd Suzhou 215123 Jiangsu Peoples R China;

    Chinese Acad Sci Collaborat Innovat Ctr Suzhou Nano Sci &

    Technol I Lab Suzhou Inst Nanotech &

    Nanobion SEID SIP 398 Ruoshui Rd Suzhou 215123 Jiangsu Peoples R China;

    Chinese Acad Sci Collaborat Innovat Ctr Suzhou Nano Sci &

    Technol Printable Elect Res Ctr Suzhou Inst Nanotech &

    Nanobion SEID SIP 398 Ruoshui Rd Suzhou 215123 Jiangsu Peoples R China;

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