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Effect of the thickness of the ZnO buffer layer on the properties of electrodeposited p-Cu2O/n-ZnO/n-AZO heterojunctions

机译：ZnO缓冲层厚度对电沉积P-CU2O / N-ZnO / N-氮杂杂交性能的影响

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摘要

Transparent conducting Cu2O/non-doped ZnO/Al-doped ZnO/FTO heterojunction solar cells were fabricated by a three-step electrodeposition by inserting a thin non-doped ZnO film as a buffer layer between a n-AZO thin film and a p-Cu2O nanostructure. The effect of the thickness of the buffer layer on the properties of the heterojunction was investigated by means of a number of techniques. Mott-Schottky electrochemical impedance analysis showed a p-type conductivity for the Cu2O layers and an n-type conductivity for the doped and undoped ZnO films. Analysis also showed that the flat band and carrier concentration of the ZnO thin films varied with the thickness of the layer of ZnO. From field emission scanning electron microscopy (FE-SEM) observation, when the thickness of ZnO was increased, the grains size and the morphology of Cu2O was affected; in addition, the cubic structure of Cu2O was damaged. This was confirmed by the atomic force microscopy (AFM) images, which showed that the surface morphology transformed from a pyramid shape to a granular form when the thickness of ZnO increased. The X-ray diffraction (XRD) analysis indicated that with Cu2O, the undoped and the doped ZnO nanostructures have a polycrystalline nature and a cubic and hexagonal wurtzite structure with (111) and (101) preferential orientations, respectively. We also noted a high transmittance of 65% from the UV-Vis spectra and a band gap energy as large as 2.4 eV was found. The current-voltage (I-V) characteristics of p-Cu2O/n-ZnO/n-AZO heterojunctions with different ZnO buffer layer thicknesses were investigated. The results showed that p-Cu2O/n-ZnO/n-AZO heterojunctions have a well-defined rectifying behavior.
机译：通过将薄的非掺杂ZnO膜作为缓冲层在N-AZO薄膜和P-之间插入透明，通过三步电沉积来制造透明导电Cu2O /非掺杂ZnO / Al掺杂的ZnO / Fo杂偶联太阳能电池。 Cu2O纳米结构。通过多种技术研究缓冲层厚度对异质结的性能的影响。 Mott-肖特基电化学阻抗分析显示了Cu2O层的p型导电性和掺杂和未掺杂的ZnO膜的N型导电性。分析还表明，ZnO薄膜的扁平带和载体浓度随ZnO层的厚度而变化。从场发射扫描电子显微镜（Fe-SEM）观察，当ZnO的厚度增加时，晶粒尺寸和Cu2O的形态受到影响;此外，Cu2O的立方结构受损。通过原子力显微镜（AFM）图像证实了这一点，这表明当ZnO的厚度增加时，从金字塔形状转化为颗粒形状的表面形态。 X射线衍射（XRD）分析表明，用Cu 2 O，未掺杂和掺杂的ZnO纳米结构具有多晶性质和具有（111）和（101）优先取向的多晶性质和立方体和六边形紫硝基钛结构。我们还注意到从UV-VIS光谱的高透射率为65％，并且发现了大约2.4eV的带隙能量。研究了具有不同ZnO缓冲层厚度的P-Cu2O / N-ZnO / N-偶氮异质结的电流 - 电压（I-V）特性。结果表明，P-CU2O / N- ZnO / N-偶氮异质结具有明确定义的整流行为。

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  • 来源
    《RSC Advances》 |2016年第73期|共12页
  • 作者

    Lahmar Halla; Azizi Amor; Schmerber Guy; Dinia Aziz;

  • 作者单位

    Univ Freres Mentouri Constantine 1 Fac Sci Exactes Dept Chim Constantine 25000 Algeria;

    Univ Ferhat Abbas Setif 1 Lab Chim Ingn Mol &

    Nanostruct Setif 19000 Algeria;

    Univ Strasbourg CNRS UMR 7504 IPCMS 23 Rue Loess BP 43 F-67034 Strasbourg France;

    Univ Strasbourg CNRS UMR 7504 IPCMS 23 Rue Loess BP 43 F-67034 Strasbourg France;

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  • 中图分类 化学;
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