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Effect of reduction/oxidation annealing on the dielectric relaxation and electrical properties of Aurivillius Na0.5Gd0.5Bi4Ti4O15 ceramics

机译:降低/氧化退火对Aurivillius Na0.5GD0.5Bi4Ti4O15陶瓷介电松弛和电性能的影响

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摘要

Bismuth layer-structured Na0.5Gd0.5Bi4Ti4O15 ceramics were synthesized via a high temperature solid state reaction. The samples were annealed under pure-argon and pure-oxygen atmospheres respectively. The dielectric relaxation and electrical properties were investigated in a wide range of frequencies and temperatures by dielectric/impedance spectroscopies. Two anomalies were observed in the temperature dependent dielectric spectra, one occurred in the range of similar to 200-400 degrees C and the other was at similar to 590 degrees C due to the occurrence of a ferroelectric phase transition. The low temperature peak was suppressed significantly by oxygen-annealing and enhanced by argon-annealing, suggesting it is oxygen-vacancy related. The ceramics exhibited a single dielectric relaxation behavior, which was attributed to the bulk contribution according to the combination analysis of impedance and electric modulus frequency spectra. Kinetic analyses of ac dielectric data were carried out to probe the possible conduction-relaxation mechanisms. Above similar to 400 degrees C, the relaxation and conduction of the compound was assigned to the motion of ionized oxygen vacancies. The experimental results indicated that the Gd-doping suppressed the leakage and improved dielectric properties of Na0.5Bi4.5Ti4O15 ceramics.
机译:通过高温固态反应合成铋层结构Na0.5GD0.5Bi4Ti4O15陶瓷。将样品分别在纯氩和纯氧气氛下退火。通过电介质/阻抗光谱研究在各种频率和温度范围内进行介电弛豫和电性能。在温度依赖性介电光谱中观察到两个异常,在类似于200-400摄氏度的范围内发生,并且由于铁电相转变的发生,另一个与590摄氏度类似。通过氧气退火并通过氩退火增强,低温峰值显着抑制,表明它是氧空位。陶瓷表现出单一介电松弛行为,其根据阻抗和电模量频谱的组合分析而归因于散装贡献。进行AC电介质数据的动力学分析以探测可能的导电放松机制。上面类似于400℃,将化合物的弛豫和传导分配给电离氧空位的运动。实验结果表明,GD掺杂抑制了Na0.5Bi4.5Ti4O15陶瓷的泄漏和改进的介电性能。

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  • 来源
    《RSC Advances》 |2016年第41期|共8页
  • 作者单位

    Beijing Inst Technol Sch Mat Sci &

    Engn Beijing Key Lab Construct Tailorable Adv Funct Ma Beijing 100081 Peoples R China;

    Beijing Inst Technol Sch Mat Sci &

    Engn Beijing Key Lab Construct Tailorable Adv Funct Ma Beijing 100081 Peoples R China;

    Beijing Inst Technol Sch Mat Sci &

    Engn Beijing Key Lab Construct Tailorable Adv Funct Ma Beijing 100081 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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