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Engineering the crystallinity of tin disulfide deposited at low temperatures

机译：在低温下工程在低温下沉积的二硫化锡的结晶度

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摘要

Tin disulfide (SnS2), which exhibits a two-dimensional (2D) layered structure, is considered to be a promising channel material for thin film transistors because of its high electrical performance and low temperature processibility. In this work, we deposited crystalline SnS2 at 150 degrees C using atomic layer deposition (ALD) which is compatible with current electronic device processing methods. And then, crystalline SnS2 films were annealed to investigate the change in crystallinity. We carried out sulfur annealing of the SnS2 films at temperatures of 250, 300 and 350 degrees C. The effects of sulfur annealing were investigated in a mixed gas atmosphere of 100 sccm argon (Ar) and 5 sccm hydrogen (H-2). SnS2 samples were examined using XRD, TEM, XPS, UV-vis and PL. The crystallinity of the SnS2 films after annealing was improved, and its grain size became larger compared with the as-deposited SnS2 film. We also observed a clear two dimensional layered structure of SnS2 using high resolution TEM. The change in the optical properties of the SnS2 films was observed using UV-vis and PL.
机译：表现出二维（2D）层状结构的二硫化锡（SNS2）被认为是薄膜晶体管的有望通道材料，因为其高电性能和低温加工性。在这项工作中，我们使用与电流电子设备处理方法兼容的原子层沉积（ALD）在150℃下沉积结晶SNS2。然后，退火结晶SNS2薄膜以研究结晶度的变化。我们在250,300和350℃的温度下进行SNS2薄膜的硫退火。研究了100 sccm氩（Ar）和5 sccm氢气（H-2）的混合气体气氛中研究了硫退火的影响。使用XRD，TEM，XPS，UV-VIS和PL检查SNS2样品。与退火后的SNS2膜的结晶度得到改善，与沉积的SNS2膜相比，其晶粒尺寸变得更大。我们还使用高分辨率TEM观察到SNS2的明确二维层叠结构。使用UV-VIS和PL观察SNS2膜的光学性质的变化。

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  • 来源
    《RSC Advances》 |2016年第59期|共7页
  • 作者

    Ham Giyul; Shin Seokyoon; Park Joohyun; Lee Juhyun; Choi Hyeongsu; Lee Seungjin; Jeon Hyeongtag;

  • 作者单位

    Hanyang Univ Div Engn &

    Mat Sci 222 Wangsimni Ro Seoul 133791 South Korea;

    Hanyang Univ Div Engn &

    Mat Sci 222 Wangsimni Ro Seoul 133791 South Korea;

    Hanyang Univ Dept Nanoscale Semicond Engn 222 Wangsimni Ro Seoul 133791 South Korea;

    Hanyang Univ Div Engn &

    Mat Sci 222 Wangsimni Ro Seoul 133791 South Korea;

    Hanyang Univ Div Engn &

    Mat Sci 222 Wangsimni Ro Seoul 133791 South Korea;

    Hanyang Univ Div Engn &

    Mat Sci 222 Wangsimni Ro Seoul 133791 South Korea;

    Hanyang Univ Div Engn &

    Mat Sci 222 Wangsimni Ro Seoul 133791 South Korea;

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  • 中图分类 化学;
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