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首页> 外文期刊>RSC Advances >Development of Al-doped ZnO thin film as a transparent cathode and anode for application in transparent organic light-emitting diodes
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Development of Al-doped ZnO thin film as a transparent cathode and anode for application in transparent organic light-emitting diodes

机译：在透明有机发光二极管中施加透明阴极和阳极的透明阴极和阳极的研制

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摘要

Aluminum doped zinc oxide thin films have been prepared by sputtering under argon gas pressure of 0.15 Pa at different radio frequency (RF) power densities to optimize the conditions for application in both bottom emitting and transparent OLEDs. The films exhibit a wurtzite-type hexagonal structure with the [0001] preferred orientation and optical transmittance of better than 80% in the visible region, but, varying energy bandgap. The sputtering at a high RF power density of 2.47 W cm(-2) yields Al-ZnO films of minimum resistivity (similar to 1 x 10(-3) U cm) and high work function (similar to 4.44 eV), appropriate for the anode in bottom emitting OLEDs. On the other hand, AZO films obtained at the low RF power density of 0.31 W cm(-2) correspond to a low work function (3.90 eV) with slightly higher electrical resistivity (5.60 x 10(-3) U cm), useful for cathodes in transparent OLEDs. The comparable performance observed for OLEDs fabricated with AZO and ITO anodes demonstrates the suitability of AZO as an alternative electrode. The increase in RF power density during sputtering leads to perceptible damage of the organic layer. The introduction of a buffer layer of Alq3/LiF/Al just above the organic layer is shown to suppress the damages significantly and improve the performance of the transparent OLEDs.
机译：铝掺杂氧化锌薄膜通过在0.15Pa的氩气体压力下溅射，以不同的射频（RF）功率密度来优化在底部发射和透明OLED中的应用条件。薄膜表现出紫立岩型六边形结构，其优选取向和光学透射率优于80％，但是电能范围变化。高射频功率密度为2.47W cm（-2）的溅射产生最小电阻率的Al-ZnO膜（类似于1×10（-3）U cm）和高功函数（类似于4.44eV），适用于底部发射OLED的阳极。另一方面，在低RF功率密度为0.31W cm（-2）的偶氮膜对应于低功函数（3.90eV），电阻率略高（5.60×10（-3）U cm），有用用于透明OLED中的阴极。用偶氮和ITO阳极制造的OLED观察到的可比较性能证明了AZO作为替代电极的适用性。溅射期间RF功率密度的增加导致有机层的可察觉损伤。示出了在有机层上方的Alq3 / LiF / Al的缓冲层的引入，以显着抑制损坏，提高透明OLED的性能。

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  • 来源
    《RSC Advances》 |2016年第90期|共12页
  • 作者

    Chauhan Ram Narayan; Tiwari Nidhi; Anand R. S.; Kumar Jitendra;

  • 作者单位

    Natl Inst Technol Patna Dept Phys Patna 800005 Bihar India;

    Natl Chiao Tung Univ Dept Photon Hsinchu 30050 Taiwan;

    Indian Inst Technol Kanpur Dept Elect Engn Kanpur 208016 Uttar Pradesh India;

    Indian Inst Technol Kanpur Mat Sci Programme Kanpur 208016 Uttar Pradesh India;

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  • 正文语种 eng
  • 中图分类 化学;
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