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Structural, compositional and functional properties of Sb-doped Mg2Si synthesized in Al2O3-crucibles

机译:在Al2O3坩埚中合成的Sb掺杂Mg2Si的结构,组成和功能性质

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摘要

Magnesium silicide (Mg2Si) is a promising candidate for thermoelectric energy conversion due to its low toxicity, the abundance of its raw constituents and its low density, allowing manufacturing of light, sustainable and relatively cheap devices. Mg2Si needs to be doped in order to increase its efficiency, making this material competitive among materials operating in the intermediate temperature range. In this work, a synthesis procedure based on melting of the raw elements in easily available and cheap Al2O3 crucibles was developed to obtain polycrystalline Sb doped Mg2Si materials in a wide range of compositions. Powders from the crushed lumps were consolidated via spark plasma sintering and then thermally annealed to obtain dense pellets of Sb:Mg2Si with Sb = 0.0, 0.1, 0.3, 0.5, 0.7, 1.0 and 1.5 at%. The effects of Sb doping and of the synthesis and sintering technique on composition, morphology and stability of n-type Mg2Si are discussed. Transport properties (Seebeck coefficient, electrical and thermal conductivity, charge carrier density) were evaluated in order to elucidate the composition-property relationship within this material system and find the optimal doping amount to optimize its thermoelectric properties.
机译:硅化镁(Mg2Si相)为热电能量转换有希望的候选,由于其低毒性,其原料成分的丰度和其密度低,使得制造的光,可持续和相对廉价的装置。的Mg2Si需要以提高其效率,以进行掺杂,使得这种材料的竞争在中间温度范围下操作的材料中。在这项工作中,合成过程基于被开发来获得多晶锑掺杂的Mg2Si材料在宽范围的组合物在容易获得和廉价的氧化铝坩埚中的原始元素的熔化。从粉碎结块的粉末通过放电等离子体烧结固结,然后进行热退火,以获得的Sb致密的粒料:的Mg2Si与SB = 0.0,0.1,0.3,0.5,0.7,1.0和1.5原子%以下。讨论锑掺杂和合成的和烧结的组合物,形态和n型的Mg 2 Si的稳定性技术的影响。输运性质(Seebeck系数,电和热传导性,电荷载流子密度),以阐明这种材料系统内的组合物性质关系,找到最佳掺杂量,以优化其热电性能进行了评价。

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  • 来源
    《RSC Advances》 |2016年第84期|共9页
  • 作者单位

    Tokyo Univ Sci Dept Mat Sci &

    Technol Katsushika Ku 6-3-1 Niijuku Tokyo 1258585 Japan;

    CNR ICMATE Corso Stati Uniti 4 I-35127 Padua Italy;

    CNR ICMATE Corso Stati Uniti 4 I-35127 Padua Italy;

    CNR ICMATE Corso Stati Uniti 4 I-35127 Padua Italy;

    CNR ICMATE Corso Stati Uniti 4 I-35127 Padua Italy;

    CNR ICMATE Corso Stati Uniti 4 I-35127 Padua Italy;

    CNR ICMATE Corso Stati Uniti 4 I-35127 Padua Italy;

    Tokyo Univ Sci Dept Mat Sci &

    Technol Katsushika Ku 6-3-1 Niijuku Tokyo 1258585 Japan;

    Tokyo Univ Sci Dept Mat Sci &

    Technol Katsushika Ku 6-3-1 Niijuku Tokyo 1258585 Japan;

    CNR ICMATE Corso Stati Uniti 4 I-35127 Padua Italy;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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