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Synthesis and optoelectronic characteristics of 20 nm diameter silver nanowires for highly transparent electrode films

机译：用于高度透明电极膜的20nm直径银纳米线的合成和光电特性

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摘要

We demonstrate the polyol synthesis of ultrathin Ag nanowires with diameters of 20 nm and an aspect ratio as high as similar to 1000 under high-pressure conditions. The increase in pressure increases density and enhances solubility, making the reactive solution rapidly reach super-saturation and increase the nucleation rate to effect a near-instantaneous formation of Ag nuclei. Clearly, the particle size was small at high pressure and an increase in pressure promoted the formation of small-size Ag seed-particles and small diameter wires. As a result, the Ag nanostructures in this study were initially formed as Ag seed particles with a diameter of 20 nm and subsequently grew into well-defined Ag nanowires with a uniform and narrow diameter distribution in the range of 16-22 nm, with a long dimension of up to 20 mm. Fabrication of random networks of the 20 nm diameter Ag nanowires synthesized lead to the fabrication of flexible transparent electrodes with excellent optoelectronic performance, with a sheet resistance of 30 Omega sq(-1) and 94% transmittance with a very low haze value of <= 1.0%, making them suitable for electronic display applications.
机译：我们证明了在高压条件下具有20nm的直径为20nm的超直径和高度相似的宽高比的多元醇合成。压力的增加会增加密度并增强溶解度，使反应溶液快速达到超饱和度并增加核心率以实现Ag核的近瞬间形成。显然，在高压下粒径小，压力增加促进了小尺寸Ag种子颗粒和小直径线的形成。结果，该研究中的Ag纳米结构最初形成为直径为20nm的Ag种子颗粒，随后在16-22nm的范围内具有均匀和窄直径分布的明确定义的Ag纳米线。长度高达20毫米的长度。制造20nm直径Ag纳米线的随机网络合成导致柔性透明电极的制造具有优异的光电性能，其薄层电阻为30ωSq（-1）和94％的透射率，具有非常低的雾度值<= 1.0％，使它们适用于电子显示器应用。

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  • 来源
    《RSC Advances》 |2016年第14期|共9页
  • 作者

    Lee Eun-Jong; Kim Yong-Hoe; Hwang Do Kyung; Choi Won Kook; Kim Jin-Yeol;

  • 作者单位

    Kookmin Univ Sch Adv Mat Engn Seoul 136702 South Korea;

    Kookmin Univ Sch Adv Mat Engn Seoul 136702 South Korea;

    Korea Inst Sci &

    Technol Interface Control Res Ctr Future Convergence Res Div Seoul 136791 South Korea;

    Korea Inst Sci &

    Technol Interface Control Res Ctr Future Convergence Res Div Seoul 136791 South Korea;

    Kookmin Univ Sch Adv Mat Engn Seoul 136702 South Korea;

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  • 正文语种 eng
  • 中图分类 化学;
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