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首页> 外文期刊>RSC Advances >Structure and electrical properties of lead-free Bi0.5Na0.5TiO3-based ceramics for energy-storage applications
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Structure and electrical properties of lead-free Bi0.5Na0.5TiO3-based ceramics for energy-storage applications

机译：无铅BI0.5NA0.5TiO3陶瓷的结构和电性能用于储能应用

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摘要

A new energy-storage ceramic system based on (1 - x)(Bi0.5Na0.5TiO3-BaTiO3)-xNaTaO(3) ((1 - x)(BNT-BT)- xNT) is reported in this study. XRD refinement indicated a composition induced rhombohedral to tetragonal phase transition. All the samples exhibited a dense microstructure with an average grain size of 1.2-1.9 mu m. The introduction of NT greatly improved the temperature stability of the dielectric properties for the BNT-BT system. For compositions x = 0.03-0.15, the working temperature range spanned over 260 degrees C satisfying TCC150 degrees C <= +/- 15%. The electric conductivity as a function of frequency followed the double power law. In the temperature region of 325-500 degrees C, the activation energy of DC conduction ranged from 1.47 eV to 1.71 eV, indicating intrinsic band-type electronic conduction. The optimum energy-storage properties were obtained in 0.90(BNT-BT)-0.10NT with an energy-storage density of 1.2 J cm(-3) and energy-storage efficiency of 74.8% at 10 kV mm(-1). The results demonstrate that (1 - x)(BNT-BT)-xNT ceramics are promising candidates for high-temperature energy-storage applications.
机译：本研究报道了一种基于（1 - X）（Bi0.5Na0.5TiO3-BatiO3）-XNATAO（3）（（1 - X）（BNT-BT） - XNT）的新能量储存陶瓷系统。 XRD细化表明组合物诱导菱形菱面向四方相转变。所有样品都表现出致密的微观结构，平均晶粒尺寸为1.2-1.9μm。 NT的引入大大提高了BNT-BT系统的电介质性能的温度稳定性。对于组合物X = 0.03-0.15，工作温度范围超过260℃，满足TCC150度C <= +/- 15％。作为频率函数的电导率遵循双电力法。在325-500摄氏度的温度区域中，直流传导的激活能量从1.47eV到1.71eV，表示内在带式电子传导。在0.90（BNT-BT）-0.10NT中获得最佳能量储存性能，其能量存储密度为1.2J厘米（-3），并且在10kVmm（-1）下的能量储存效率为74.8％。结果表明（1 - X）（BNT-BT）-XNT陶瓷是高温储能应用的承诺候选者。

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  • 来源
    《RSC Advances》 |2016年第64期|共12页
  • 作者

    Xu Qi; Liu Hanxing; Zhang Lin; Xie Juan; Hao Hua; Cao Minghe; Yao Zhonghua; Lanagan Michael T.;

  • 作者单位

    Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

    Proc Wuhan 430070 Hubei Peoples R China;

    Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

    Proc Wuhan 430070 Hubei Peoples R China;

    Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

    Proc Wuhan 430070 Hubei Peoples R China;

    Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

    Proc Wuhan 430070 Hubei Peoples R China;

    Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

    Proc Wuhan 430070 Hubei Peoples R China;

    Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

    Proc Wuhan 430070 Hubei Peoples R China;

    Wuhan Univ Technol State Key Lab Adv Technol Mat Synth &

    Proc Wuhan 430070 Hubei Peoples R China;

    Penn State Univ Mat Res Inst University Pk PA 16802 USA;

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