Organic/inorganic epitaxy: commensurate epitaxial growth of truxenone on Cu (111)

Ramadan A. J.; Nielsen C. B.; Holliday S.; Jones T. S.; McCulloch I.; Rochford L. A.

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Organic/inorganic epitaxy: commensurate epitaxial growth of truxenone on Cu (111)

机译：有机/无机外延：Cu（111）上的葡萄酮的外延生长

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The growth of monolayers of truxenone on Cu (111) is investigated using scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). Two distinct molecular packing motifs are observed that exist individually at low and high coverage, and coexist at intermediate states. In each case a commensurate epitaxial relationship between the molecular surface mesh and the substrate is observed.

机译：使用扫描隧道显微镜（STM）和低能量电子衍射（LEED）研究Cu（111）上的单层葡萄干的生长。观察到两种不同的分子包装基序，其在低覆盖率和高覆盖范围内单独存在，并在中间状态下共存。在每种情况下，观察分子表面网和基板之间的相应外延关系。

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《RSC Advances》 |2016年第21期|共4页
作者
Ramadan A. J.; Nielsen C. B.; Holliday S.; Jones T. S.; McCulloch I.; Rochford L. A.;
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作者单位

Univ Warwick Dept Chem Gibbet Hill Rd Coventry CV4 7AL W Midlands England;

Univ London Imperial Coll Sci Technol &

Med Dept Chem London SW7 2AZ England;

Univ London Imperial Coll Sci Technol &

Med Dept Chem London SW7 2AZ England;

Univ Warwick Dept Chem Gibbet Hill Rd Coventry CV4 7AL W Midlands England;

Univ London Imperial Coll Sci Technol &

Med Dept Chem London SW7 2AZ England;

Univ Warwick Dept Chem Gibbet Hill Rd Coventry CV4 7AL W Midlands England;

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中图分类化学;
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1. Organic/inorganic epitaxy: commensurate epitaxial growth of truxenone on Cu (111) [J] . Ramadan A. J., Nielsen C. B., Holliday S., RSC Advances . 2016,第21期

机译：有机/无机外延：Cu（111）上的葡萄酮的外延生长
2. Epitaxial Growth of Si(111)/Er2O3(111) Structure on Si(111) by Molecular Beam Epitaxy [J] . XU Run, TANG Min-Yan, ZHU Yan-Yan, 中国物理快报：英文版 . 2011,第003期

机译：通过分子束外延在Si（111）上外延生长Si（111）/ Er2O3（111）结构
3. On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy [J] . B. Alloing S. Vézian O. Tottereau P. Vennéguès E. Beraudo and J. Zuniga-Pérez Applied Physics Letteres . 2011,第1期

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4. Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of wurtzite GaN on (111) Si substrate by metalorganic vapor phase epitaxy [C] . Yasutoshi Kawaguchi, Yoshio Honda, Masahito Yamaguchi, International symposium on compound semiconductors . 1999

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5. Lateral epitaxial growth techniques for gallium nitride thin films on 6H-silicon carbide(0001) substrates via metalorganic vapor phase epitaxy. [D] . Thomson, Darren Brent. 2001

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7. Organic/inorganic epitaxy : commensurate epitaxial growth of truxenone on Cu (111) [O] . Ramadan, Alexandra J., Nielsen, C. B., Holliday, Sarah, 2016

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8. Epitaxial YBa2Cu3O(7-x) thin films: Scanning tunneling microscope study of the initial stages of epitaxial growth, growth mechanism, and effects of substrate temperature. [R] . S. Zhu X. Y. Zheng D. H. Lowndes D. P. Norton R. J. Warmack 1991

机译：外延YBa2Cu3O（7-x）薄膜：扫描隧道显微镜研究外延生长的初始阶段，生长机制和衬底温度的影响。

Organic/inorganic epitaxy: commensurate epitaxial growth of truxenone on Cu (111)

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