首页> 外文期刊>RSC Advances >Synthesis of Te-doped ZnO nanowires with promising field emission behavior
【24h】

Synthesis of Te-doped ZnO nanowires with promising field emission behavior

机译:具有前景场排放行为的TE掺杂ZnO纳米线的合成

获取原文
获取原文并翻译 | 示例
           

摘要

In the current study, a successful synthesis of ZnO nanowire films doped with Te was performed through electrodeposition on the zinc foil followed by annealing in air for 4 hours at 400 degrees C. The conditions for growth were chosen as the concentrations of electrolyte and deposition time. The XRD patterns for the post-annealed samples are shown as a set of well-specified diffraction peaks relating to the ZnO wurtzite phase. The growth conditions impact the surface morphologies of the as-prepared films. Upon annealing, the ZnO nanowire formation was observed for shorter deposition times. The incorporation of Te ions into the ZnO lattice was confirmed using X-ray and Auger photoelectron spectroscopy. The diverse emission bands originating from different transition mechanisms were evaluated through photoluminescence and Raman studies. In the field emission studies, the best threshold field values, which are necessary for drawing an emission current density of similar to 100 mu A cm(-2), are 2.13 V mu m(-1) for T1S1 and 2.42 V mu m(-1) for T1S2. The post-annealed film with a lower concentration of wires shows an excellent emission current stability at the preset value of similar to 10 mu A over 4 hours. The results show that Te ions play a key role in controlling the morphologies, resulting in various morphologies and densities of the ZnO wires, which have different field emission features. This technique may have a potential to produce electron sources for high current density applications.
机译:在目前的研究中,箔接着在空气中退火4小时,在400℃下生长的条件被选为的电解质和沉积时间的浓度是通过在锌电沉积进行用Te掺杂氧化锌纳米线膜的成功合成。后退火后样品的XRD图案被示为与ZnO Wurtzite相有关的一组良好的指定衍射峰。生长条件会影响原制膜的表面形态。在退火时,观察到ZnO纳米线形成以更短的沉积时间。使用X射线和螺旋钻光电子谱确认将TE离子掺入ZnO格中。通过光致发光和拉曼研究评估源自不同转变机制的不同发射带。在现场发射研究中,用于拉出类似于100μmcm(-2)的发射电流密度所需的最佳阈值场值为T1S1和2.42 V MU M的2.13 V Mu M(-1)( -1)对于T1S2。具有较低浓度线浓度的退火薄膜显示出优异的排放电流稳定性,其预设值类似于10μm以上超过4小时。结果表明,碲离子在控制形态,从而导致各种形态和氧化锌电线的密度,这有不同的场发射特性发挥关键作用。该技术可以具有产生用于高电流密度应用的电子源。

著录项

  • 来源
    《RSC Advances》 |2016年第116期|共10页
  • 作者

    Jamali-Sheini Farid;

  • 作者单位

    Islamic Azad Univ Adv Surface Engn &

    Nano Mat Res Ctr Dept Phys Ahvaz Branch Ahwaz Iran;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号