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Photodynamic response of a solution-processed organolead halide photodetector

机译：溶液加工的溶剂卤化物光电探测器的光动力响应

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摘要

CH3NH3PbI3 perovskite semiconductors have received intensive attention as a light absorbing material in high performance solar cells and photodetectors. Herein, we demonstrated a solution-processed photodetector on an indium tin oxide (ITO) substrate by a low-cost spin coating technique. The photodetector exhibits high responsivity, large detectivity and a broad spectrum response. In order to understand the operational mechanism of photodetectors, diode characteristics under dark and at various wavelength lights are performed. The band structure calculation and absorption spectra based on density functional theory (DFT) exhibits a direct band-gap value of 1.53 eV, which is in good agreement with the experimental results. The projected density of states (PDOS) and total density of states (DOS) analysis shows the bonding mechanism in the CH3NH3PbI3. The performance of this perovskite-based photodetector markedly exceeds that of organic and hybrid photodetectors. The accumulation of charge carriers and the hysteresis mechanism was also addressed by a model based on ion migration. Our results provide a proper device design with a simpler approach that has the potential to be scaled up.
机译：CH3NH3PBI3 PEROVSKITE半导体在高性能太阳能电池和光电探测器中接受了密集的注意力。这里，我们通过低成本的旋涂技术在氧化铟锡（ITO）衬底上证明了一种溶液处理的光电探测器。光电探测器具有高响应性，大探测和广谱响应。为了理解光电探测器的操作机制，执行暗和各种波长灯下的二极管特性。基于密度函数理论（DFT）的带结构计算和吸收光谱表现出1.53eV的直接带隙值，与实验结果吻合良好。突出的状态（PDO）和状态的总密度（DOS）分析显示CH3NH3PBI3中的粘合机制。基于Perovskite的光电探测器的性能显着超过有机和混合光电探测器的性能。基于离子迁移的模型也解决了电荷载体和滞后机制的累积。我们的结果提供了一个适当的设备设计，具有更简单的方法，具有较大的措施。

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  • 来源
    《RSC Advances》 |2016年第113期|共8页
  • 作者

    Bhatt Vishwa; Pandey Kavita; Gupta Sanjeev. K.; Sonvane Yogesh; Yadav Pankaj; Kumar Manoj;

  • 作者单位

    Pandit Deendayal Petr Univ Sch Technol Gandhinagar 382007 India;

    Pandit Deendayal Petr Univ Sch Technol Gandhinagar 382007 India;

    St Xaviers Coll Dept Phys &

    Elect Computat Mat &

    Nanosci Grp Ahmadabad 380009 Gujarat India;

    SV Natl Inst Technol Dept Appl Phys Adv Mat Lab Surat 395007 India;

    Pandit Deendayal Petr Univ Sch Technol Gandhinagar 382007 India;

    Pandit Deendayal Petr Univ Sch Technol Gandhinagar 382007 India;

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  • 正文语种 eng
  • 中图分类 化学;
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