Self-powered photosensing characteristics of amorphous carbon/silicon heterostructures

Hao L. Z.; Liu Y. J.; Gao W.; Han Z. D.; Xu Z. J.; Liu Y. M.; Zhu J.

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Self-powered photosensing characteristics of amorphous carbon/silicon heterostructures

机译：无定形碳/硅异质结构的自动光电特征

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Amorphous carbon (a-C) thin films are deposited on p-type silicon (Si) substrates using magnetron sputtering technique and the photodetector devices based on the a-C/Si heterostructures are fabricated. The photosensing characteristics of the devices are investigated. Under light irradiation, the fabricated a-C/Si device exhibits obvious photovoltaic characteristics. This enables its application as a self-powered photodetector operated at zero bias voltage. The obtained results show that the device is highly sensitive to broadband wavelength from the ultraviolet to near-infrared light, showing a high detectivity of similar to 2.9 x 10(13) cm Hz(1/2) W-1, as well as a high responsitivity of similar to 292.5 mA W-1, and a fast response speed of similar to 8.3 mu s. The mechanisms to the self-powered photosensing characteristics are clarified by the determination of the energy-band alignment near the interface of the a-C/Si heterostructures.

机译：使用磁控溅射技术沉积非晶碳（A-C）薄膜沉积在p型硅（Si）基板上，并且制造基于A-C / Si异质结构的光电探测器装置。研究了器件的光敏特性。在光照射下，制造的A-C / Si器件具有明显的光伏特性。这使其应用于以零偏置电压操作的自动光电探测器。所得结果表明，该器件对紫外线到近红外光的宽带波长高度敏感，显示出类似于2.9×10（13 )cm Hz（1/2）W-1的高探测器，以及a 高折载度与292.5 mA W-1相似，快速响应速度与8.3亩。通过确定A-C / Si异质结构的界面附近的能带对准来阐明自给自源光囊特性的机制。

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《RSC Advances》 |2016年第46期|共7页
作者
Hao L. Z.; Liu Y. J.; Gao W.; Han Z. D.; Xu Z. J.; Liu Y. M.; Zhu J.;
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China Univ Petr Coll Sci Qingdao 266580 Shandong Peoples R China;

China Univ Petr Coll Sci Qingdao 266580 Shandong Peoples R China;

China Univ Petr Coll Sci Qingdao 266580 Shandong Peoples R China;

China Univ Petr Coll Sci Qingdao 266580 Shandong Peoples R China;

China Univ Petr Coll Sci Qingdao 266580 Shandong Peoples R China;

China Univ Petr Coll Sci Qingdao 266580 Shandong Peoples R China;

Univ Elect Sci &

Technol China State Key Lab Elect Thin Films &

Integrated Devic Chengdu 610054 Peoples R China;

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中图分类化学;
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1. Self-powered photosensing characteristics of amorphous carbon/silicon heterostructures [J] . Hao L. Z., Liu Y. J., Gao W., RSC Advances . 2016,第46期

机译：无定形碳/硅异质结构的自动光电特征
2. The effect of the native silicon dioxide interfacial layer on photovoltaic characteristics of gold/p-type amorphous boron carbon thin film alloy/silicon dioxide-type silicon/aluminum solar cells [J] . Chen Tsuen-Sung, Hsueh Yu-Chun, Chiou Shoo-En, Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2015,第Null期

机译：天然二氧化硅界面层对金/ p型非晶硼碳薄膜合金/二氧化硅/ n型硅/铝太阳能电池光伏特性的影响
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机译：在共掺杂非晶碳/硅异质结构中观察到的光伏效应和光电导性增强
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机译：界面氧化硅层对铁掺杂无定形碳膜/ Si_2 / Si异质结构的光伏作用的影响
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机译：硅/硅（1-y）碳（y）和硅/硅（1-x-y）锗（x）碳（y）异质结构的能带工程及其在PNP异质结双极晶体管（碳化硅，碳化硅锗）中的应用。
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机译：CVD石墨烯上等离子增强化学气相沉积法制备的无转移反型石墨烯/硅异质结构
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机译：基尔霍夫广义律适用于非晶硅/晶体硅异质结构
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机译：硅，碳和碳化硅异质结构的研究

Self-powered photosensing characteristics of amorphous carbon/silicon heterostructures

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