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Fabrication of interdigitated micro-supercapacitor devices by direct laser writing onto ultra-thin, flexible and free-standing graphite oxide films

机译:通过直接激光写入超薄,柔性和独立的石墨氧化物膜上的互化微外超涂物装置的制造

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摘要

In this work we present graphene-based in-plane flexible interdigitated micro-supercapacitor devices fabricated through direct laser writing onto ultra-thin graphite oxide (GO) films. The fabrication route is simple, fast, additive-free, mask-free and cost effective. This involves direct micro-writing of reduced graphene oxide (rGO) by a pulsed UV laser on a very small area (1.14 cm(2)). The fabricated micro-supercapacitor contains nineteen pairs of rGO electrodes separated by the unreduced portion of the GO film. The single laser patterned rGO electrode presents low resistivity, while the unpatterned portion is non-conducting. Under the optimized laser parameters the 2.2 mu m ultra-thin GO films were completely and uniformly reduced. The electrochemical measurements showed that the micro-supercapacitor, packed in a glass cavity, and in the presence of a liquid electrolyte have a capacitance nearly 288% higher (288.7 mF cm(-3)) compared to the as-fabricated device (0.36 mF cm(-3)). The as-fabricated micro-supercapacitor without electrolyte also shows some capacitance due to the presence of free ions in the unreduced portion of GO which plays a crucial role. Furthermore, the cycling stability of the as-fabricated micro-supercapacitor is robust, with not much performance degradation for more that 5000 cycles.
机译:在这项工作中,我们本基于石墨烯的平面内灵活交叉指型微超级电容器装置通过直接激光写入到超薄氧化石墨(GO)膜制成。制造路线简单,快速,无添加剂,掩盖自由和成本效益。这涉及通过脉冲UV激光还原的石墨烯氧化物(RGO)的直接微写上的非常小的面积(1.14厘米(2))。所制造的微型超级电容器包含19双RGO电极的分离由GO膜的未还原的部分。单个激光图案化RGO电极呈现低电阻率,而所述未图案化部分是不导电的。在优化的激光参数的2.2微米的超薄GO膜完全且均匀地减小。电化学测量结果表明,微型超级电容器,装在玻璃空腔,并且在液体电解质的存在下具有较高的电容几乎288%(288.7厘米μF的(-3))相比,因为制造的设备(0.36μF的厘米(-3))。没有电解质中的作为制造的微型超级电容器还示出了一些电容由于自由离子在其中发挥关键作用GO的未还原部分的存在。此外,作为制造的微型超级电容器的循环稳定性是健壮的,具有用于多于5000个周期没有太大的性能下降。

著录项

  • 来源
    《RSC Advances》 |2016年第88期|共8页
  • 作者单位

    Univ Estadual Campinas UNICAMP Ctr Semicond Components &

    Nanotechnol CCS Nano BR-13083870 Campinas SP Brazil;

    Univ Estadual Campinas UNICAMP Ctr Semicond Components &

    Nanotechnol CCS Nano BR-13083870 Campinas SP Brazil;

    Ctr Informat Technol Renato Archer CTI BR-13069901 Campinas SP Brazil;

    Univ Estadual Campinas UNICAMP Ctr Semicond Components &

    Nanotechnol CCS Nano BR-13083870 Campinas SP Brazil;

    Univ Estadual Campinas UNICAMP Ctr Semicond Components &

    Nanotechnol CCS Nano BR-13083870 Campinas SP Brazil;

    Cent Univ Himanchal Pradesh Sch Phys &

    Mat Sci Dharamshala 176215 HP India;

    Univ Estadual Campinas UNICAMP Inst Chem Dept Analyt Chem BR-13084971 Campinas SP Brazil;

    Univ Estadual Campinas UNICAMP Inst Chem Dept Analyt Chem BR-13084971 Campinas SP Brazil;

    Univ Estadual Campinas UNICAMP Ctr Semicond Components &

    Nanotechnol CCS Nano BR-13083870 Campinas SP Brazil;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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