• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Quenching induced fracture behaviors of CVD-grown polycrystalline molybdenum disulfide films
【24h】

Quenching induced fracture behaviors of CVD-grown polycrystalline molybdenum disulfide films

机译：CVD种植多晶钼二硫膜的猝灭诱导裂缝行为

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The fracture behavior of two-dimensional polycrystalline molybdenum disulfide (MoS2) films is essential to device performance and has attracted tremendous attention in recent years. Here, we investigate the mixed intergranular and transgranular fracture behaviors of CVD-grown polycrystalline MoS2 atomic layers using multiple techniques. The underlying mechanism is proposed to be that micro-cracks initially nucleate at grain boundary junctions and propagate along with the grain boundaries, resulting in intergranular fracture behavior. On the other hand, as-existed sulfur vacancies serve as crack nuclei and propagate along energy preference directions through Mo-S bond breaking, resulting in transgranular fracture behavior. Lattice shrinking induced compressive, rather than tensile strain is residual in fractured MoS2 microflakes, which enlarges the corresponding bandgap by similar to 200 meV. Our work deepens the understanding of the fracture behaviors of polycrystalline MoS2 atomic layers and demonstrates a promising method to engineer the strain in MoS2-like atomically-thin materials to further tune their physical properties.
机译：二维多晶钼二硫化物（MOS2）薄膜的断裂行为对于装置性能至关重要，近年来引起了巨大的关注。在这里，我们研究了使用多种技术的CVD生长多晶MOS2原子层的混合晶间和晶状体断裂行为。潜在的机理被提出为微裂纹最初在晶界交叉点处核心成核，并与晶界一起传播，导致骨间骨折行为。另一方面，硫空位用作裂纹核，沿着能量偏好方向传播通过MO-S键断裂，导致转弦骨折行为。晶格收缩诱导的压缩，而不是拉伸菌株是残留的裂缝MOS2微薄片，其通过类似于200 meV来扩大相应的带隙。我们的工作深化了对多晶MOS2原子层的裂缝行为的理解，并证明了一种希望在MOS2样的原料中工程菌株的有希望的方法，以进一步调节它们的物理性质。

著录项

  • 来源
    《RSC Advances》 |2016年第64期|共7页
  • 作者

    Hao Song; Yang Bingchu; Gao Yongli;

  • 作者单位

    Cent S Univ Coll Phys Inst Super Microstruct &

    Ultrafast Proc Adv Mat 605 South Lushan Rd Changsha 410012 Hunan Peoples R China;

    Cent S Univ Coll Phys Inst Super Microstruct &

    Ultrafast Proc Adv Mat 605 South Lushan Rd Changsha 410012 Hunan Peoples R China;

    Cent S Univ Coll Phys Inst Super Microstruct &

    Ultrafast Proc Adv Mat 605 South Lushan Rd Changsha 410012 Hunan Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号