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首页> 外文期刊>RSC Advances >CdIn2S4 quantum dots: novel solvent-free synthesis, characterization and enhancement of dye-sensitized solar cells performance
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CdIn2S4 quantum dots: novel solvent-free synthesis, characterization and enhancement of dye-sensitized solar cells performance

机译：CDIN2S4量子点：新型无溶剂合成，表征和增强染料敏化太阳能电池性能

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摘要

Herein, CdIn2S4 (CdIS) quantum dots were synthesized via a solid-state thermal decomposition approach for the first time. [Cd(en)(2)]SO4, In(NO3)(3)center dot 5H(2)O and thioacetamide were used as the cadmium, indium and sulfur sources. The as-synthesized products were characterized extensively by techniques such as XRD, EDS, SEM, TEM, AFM, FTIR and DRS. The effect of the cadmium source type, temperature and reaction atmosphere on the morphology and purity of the final products were studied. The results showed that choosing the appropriate temperature and cadmium source has a significant influence on CdIS-QDs synthesis. Moreover, the as-prepared CdIS-QDs were utilized as a barrier layer in dye sensitized solar cells (DSSCs) for the first time. The short-circuit photocurrent density (J(sc)), open-circuit voltage (V-oc), fill factor (FF) and efficiency of the solar cell were studied. The power conversion efficiency of the DSSCs using a CdIS-QDs barrier layer was 8.17%, which is 32.2% higher than the cell without a novel barrier layer (6.18%).
机译：这里，首次通过固态热分解方法合成CDIN2S4（CDIS）量子点。 [Cd（Zh）（2）] SO4，In（NO 3）（3）中心点5H（2）o和硫代乙酰胺用作镉，铟和硫源。由XRD，EDS，SEM，TEM，AFM，FTIR和DRS等技术广泛地表征了AS合成的产品。研究了镉源型，温度和反应气氛对最终产物的形态和纯度的影响。结果表明，选择适当的温度和镉源对CDIS-QD合成有显着影响。此外，首次使用AS制备的CDIS-QD作为染料敏化太阳能电池（DSSCs）的阻挡层。研究了短路光电流密度（J（SC）），开路电压（V-OC），填充因子（FF）和太阳能电池的效率。使用CDIS-QDS阻隔层的DSSCs的功率转换效率为8.17％，而没有小型阻挡层（6.18％）的电池高出32.2％。

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  • 来源
    《RSC Advances》 |2016年第46期|共9页
  • 作者

    Mousavi-Kamazani Mehdi; Zarghami Zabihullah; Salavati-Niasari Masoud; Amiri Omid;

  • 作者单位

    Islamic Azad Univ Kashan Branch Young Researchers &

    Elites Club Kashan Iran;

    Islamic Azad Univ Arak Branch Young Researchers &

    Elites Club Arak Iran;

    Univ Kashan Inst Nano Sci &

    Nano Technol POB 87317-51167 Kashan Iran;

    Univ Kashan Inst Nano Sci &

    Nano Technol POB 87317-51167 Kashan Iran;

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  • 正文语种 eng
  • 中图分类 化学;
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