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Dialkoxyphenyldithiophene-based small molecules with enhanced absorption for solution processed organic solar cells

机译:基于二烷基二硫代丙酮的小分子,具有增强的溶液加工有机太阳能电池的吸收

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摘要

Compared to the popular benzodithiophene (BDT) unit, dialkoxyphenyldithiophene (PDT) has the advantages of increased planarity along the molecular backbone (decreased dihedral angles between PDT and pi bridges) and stronger donating ability, which may lead to better absorption, higher hole mobility and even higher power conversion efficiency (PCE). In this paper, two small molecules (CNO2TPDT and RD2TPDT) with PDT unit as a donor, bithiophene (2T) as pi bridges, and oxoalkylated nitrile (CNO) or 3-ethylrhodanine (RD) as end-capped acceptors were synthesized and characterized. As expected, CNO2TPDT and RD2TPDT showed excellent absorption with edges of 720 and 745 nm, respectively, which are red-shifted by ca. 30 nm compared with their BDT analogues. A CNO2TPDT-based device exhibited relatively high V-OC of 0.87 V but a low PCE of 4.16% due to a large phase separation. In contrast, a RD2TPDT-based device exhibited higher PCE of 6.64% with a J(SC) of 12.74 mA cm(-2) 2 due to its red-shift absorption, better miscibility with [6,6]-phenyl-C-71 butyric acid methylester (PC71BM) and higher hole mobility. This study demonstrated rational molecule design and effective morphology control can lead to good absorption ability and hole mobility, indicating the possibility for obtaining higher J(SC) and PCE.
机译:与流行的苯二噻吩(BDT)单元相比,二烷基苯基二硫代丙酮(PDT)具有沿着分子骨架(PDT和PI桥梁之间的二偏角角度下降)和更强的捐赠能力的优点,这可能导致更好的吸收,更高的孔移动性和更高的孔甚至更高的功率转换效率(PCE)。在本文中,合成了两种用PDT单元的小分子(CNO2TPDT和RD2TPDT)作为供体,酸硼丙基烯(2T)和氧代烷基化丁腈(CNO)或3-乙基 - 癸氨酸(RD)作为终点受体,并表征。正如预期的那样,CNO2TPDT和RD2TPDT分别显示出优异的720和745nm的边缘,其被CA红移换。与他们的BDT类似物相比,30nm。基于CNO2TPDT的器件表现出0.87V的相对高的V-OC,但由于大相分离而导致的低PCE为4.16%。相反,由于其红移吸收,j(sc),j(sc)2的j(sc)表示,基于RD2TPDT的器件较高的6.64%,j(sc)2为12.74 mA cm(-2)2,与[6,6] - 苯基-c-更好的混溶性71丁酸甲基酯(PC71BM)和更高的空穴迁移率。本研究证明了合理的分子设计,有效的形态学控制可以导致良好的吸收能力和空穴迁移率,表明获得更高的J(SC)和PCE的可能性。

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  • 来源
    《RSC Advances》 |2016年第65期|共7页
  • 作者单位

    Natl Ctr Nanosci &

    Technol CAS Ctr Excellence Nanosci CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

    Natl Ctr Nanosci &

    Technol CAS Ctr Excellence Nanosci CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

    Natl Ctr Nanosci &

    Technol CAS Ctr Excellence Nanosci CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

    Natl Ctr Nanosci &

    Technol CAS Ctr Excellence Nanosci CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

    Natl Ctr Nanosci &

    Technol CAS Ctr Excellence Nanosci CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

    Natl Ctr Nanosci &

    Technol CAS Ctr Excellence Nanosci CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

    Natl Ctr Nanosci &

    Technol CAS Ctr Excellence Nanosci CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

    Natl Ctr Nanosci &

    Technol CAS Ctr Excellence Nanosci CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

    Natl Ctr Nanosci &

    Technol CAS Ctr Excellence Nanosci CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

    Natl Ctr Nanosci &

    Technol CAS Ctr Excellence Nanosci CAS Key Lab Nanosyst &

    Hierarch Fabricat Beijing 100190 Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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