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首页> 外文期刊>RSC Advances >All solution processable graded CIGS solar cells fabricated using electrophoretic deposition
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All solution processable graded CIGS solar cells fabricated using electrophoretic deposition

机译：所有溶液可加工分级CIGS使用电泳沉积制造的太阳能电池

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Graded band gap chalcopyrite solar cells are fabricated based on an all solution processable synthesis method with the aid of electrophoretic deposition and a superstrate structure. The solvothermally synthesized nanoparticles crystallize in the chalcopyrite-wurtzite mixed phase without any trace of impurity phases, as confirmed by XRD and Raman spectroscopy. Crack-free electrophoretic deposited films are formed. However, the porosity of the films is raised due to the Ga content. The J-V characteristics of the CuIn1-xGaxS2 samples are compared with those of back extreme grading (BEG), back moderate grading (BMG), and double moderate grading (DMG) solar cells. The highest efficiency (J(SC) = 16.50 mA cm(-2), V-OC = 640 mV, fill factor = 0.61, eta = 6.44%) is achieved in DMG cells, mainly due to reducing the minority carrier recombination at the absorber/back contact interface by back grading and increasing the photoresponse or open circuit voltage by front grading in the space charge region. The medium double grading in this structure avoids notch formation in the band structure. Dark diode analysis demonstrates that the lowest series resistance, shunt conductance and reverse saturation current are obtained, as well as a diode ideality factor near 2, in DMG solar cells.
机译：基于电泳沉积和超晶体结构，基于所有溶液加工合成方法制造分级带差距核黄素太阳能电池。如XRD和拉曼光谱证实，溶剂热合成的纳米颗粒在黄铜矿 - 纯度混合相中结晶而没有任何杂质相的痕迹。形成无裂缝的电泳沉积膜。然而，由于GA含量，薄膜的孔隙率被提高。 Cuin1-XgaxS2样品的J-V特性与后极度分级（乞求），后退等级（BMG）和双中等分级（DMG）太阳能电池进行比较。在DMG细胞中达到最高效率（J（SC）= 16.50 mA cm（-2），V-oc = 640mV，填充因子= 0.61，ETA = 6.44％，主要是由于减少了少数载体重组通过反向分级的吸收器/背面接触界面并通过空间电荷区域的前分级增加光响应或开路电压。该结构中的介质双分级避免了带结构中的凹口形成。暗二极管分析表明，在DMG太阳能电池中获得最低串联电阻，分流电阻和反向饱和电流，以及二极管Igeality因子附近。

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