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Carbonaceous layer interfaced TiO2/RGO hybrids with enhanced visible-light photocatalytic performance

机译：碳质层接口TiO2 / RGO杂交物，具有增强的可见光光催化性能

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摘要

A facile solvothermal method combined with heat treatment was introduced to obtain enhanced photocatalytic activity of TiO2@C/RGO (reduced graphene oxide) photocatalyst under visible light. By adjusting the annealing temperature, the physical and chemical status of the interfacial carbonaceous layer could be successfully tuned. The carbonaceous layer with optimal thickness and degree of order obtained at 360 degrees C forms a good bridge between the TiO2 particles and RGO sheet. The resulting TiO2@C-360/RGO photocatalyst exhibited the best performance in the photodegradation of MO under visible light, benefiting from the ideal connection provided by the optimal carbonaceous layer and thus enhanced separation of activated electron-hole pairs at the interface. In addition, the photocatalytic activity was adjusted synchronously by controlling the thickness and degree of order of the carbonaceous layer in the TiO2@C/RGO hybrids. This work indicates the importance of interface engineering to obtain TiO2-based nanohybrids with high photocatalytic performance.
机译：将引入与热处理结合的容易溶剂热法，以在可见光下获得TiO 2 @ C / RGO（氧化石墨烯）光催化剂的增强的光催化活性。通过调节退火温度，可以成功调整界面碳质层的物理和化学状态。在360℃下获得的具有最佳厚度和订单程度的碳质层在TiO 2颗粒和RGO片材之间形成良好的桥梁。得到的TiO2 @ C-360 / Rgo光催化剂在可见光下的MO光降解中表现出最佳性能，从最佳碳质层提供的理想连接中受益，从而增强了界面处的活性电子空穴对的分离。此外，通过控制TiO 2 @ C / RGO杂交体中碳质层的厚度和阶数同步地调节光催化活性。这项工作表明界面工程的重要性，以获得具有高光催化性能的基于TiO2的纳米嗜含量。

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  • 来源
    《RSC Advances》 |2016年第46期|共8页
  • 作者

    Xu Jianfeng; Tian Jiawei; Zhang Yuewei; Riaz Ammara; Liu Yi; Zhi Mingjia; Hong Zhanglian; Zhou Chunmei;

  • 作者单位

    Zhejiang Univ Sch Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Sch Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Sch Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Sch Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Sch Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Sch Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Sch Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

    Zhejiang Univ Sch Mat Sci &

    Engn State Key Lab Silicon Mat Hangzhou 310027 Zhejiang Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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