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Growth of dense CNT on the multilayer graphene film by the microwave plasma enhanced chemical vapor deposition technique and their field emission properties

机译：微波等离子体增强化学气相沉积技术及其场排放特性致密CNT在多层石墨烯膜上的生长及其现场排放性能

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摘要

Catalyst assisted carbon nanotubes (CNTs) were grown on multilayer graphene (MLG) on copper and silicon substrates by the microwave plasma enhanced chemical vapor deposition technique. The transmission of the MLG was found to vary between 82 to 91.8% with the increase of deposition time. Scanning electron microscopy depicted that the MLG film survived at the deposition condition of CNTs with the appearance of the damaged structure due to the plasma. Growth of CNTs was controlled by adjusting the flow rates of methane gas. The density of carbon nanotubes was observed to increase with a higher supply of methane gas. It was observed that the field emission properties were improved with the increased density of CNTs on MLG. The lowest turn-on field was found to be 1.6 V mm~1 accompanied with the highest current density of 2.8 mA cm~(-2) for the CNTs with the highest density. The findings suggested that the field emission properties can be tuned by changing the density of CNTs.
机译：通过微波等离子体增强的化学气相沉积技术在铜和硅基衬底上在多层石墨烯（MLG）上生长催化剂辅助碳纳米管（CNT）。 发现MLG的透射率随着沉积时间的增加而变化在82％至91.8％之间。 扫描电子显微镜描绘，MLG膜在CNT的沉积条件下存活，由于等离子体引起的损坏结构的外观。 通过调节甲烷气体的流速来控制CNT的生长。 观察到碳纳米管的密度随着甲烷气体供应的增加而增加。 观察到，随着MLG的CNT的密度增加，改善了场排放性能。 发现最低的开启场为1.6 V mm〜1伴随着最高密度的CNT的最高电流密度2.8 mA cm〜（-2）。 结果表明，可以通过改变CNT的密度来调整场发射特性。

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  • 来源
    《RSC Advances》 |2015年第109期|共10页
  • 作者

    Atul Bisht; S. Chockalingam; O. S. Panwar;

  • 作者单位

    Polymorphic Carbon Thin Films Group Physics of Energy Harvesting Division CSIR-National Physical Laboratory Dr K. S. Krishnan Marg New Delhi-110012 India.;

    Polymorphic Carbon Thin Films Group Physics of Energy Harvesting Division CSIR-National Physical Laboratory Dr K. S. Krishnan Marg New Delhi-110012 India.;

    Polymorphic Carbon Thin Films Group Physics of Energy Harvesting Division CSIR-National Physical Laboratory Dr K. S. Krishnan Marg New Delhi-110012 India. ospanwar@mail.nplindia.ernet.in;

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  • 正文语种 eng
  • 中图分类 化学;
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