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Modulation of photovoltage in mesoscopic perovskite solar cell by controlled interfacial electron injection

机译:受控界面电子注射介术钙钛矿太阳能电池光伏调制

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摘要

Controlled interfacial electron injection was investigated by surface modification of mesoporous TiO2 film with insulating thin ZrO2 layer in a mesoscopic CH3NH3PbI3 perovskite solar cell. Open-circuit voltage (V-oc) was linearly increased with increasing the thickness of the surface ZrO2 film from 863 mV for the bare TiO2 to 988 mV for the surface modified TiO2 with 2.2 nm-thick ZrO2 layer (V-oc was 1030 mV for the mesoporous ZrO2), which was due to decrease in electron injection by thickening the surface ZrO2 layer. Change in electron injection was confirmed by photoluminescence spectra. Charge collection was diminished with the surface ZrO2 layer, which might be related to the limited electron diffusion length in the solution-processed perovskite layer due to the reduced injection into TiO2. Fill factor was reproducibly improved by surface modification, which is due to increased shunt resistance. By the controlled electron injection method, a power conversion efficiency was improved from 11.7% to 13.6% by introducing 1.1 nm-thick ZrO2 layer on the TiO2 surface.
机译:通过在介于思科CH3NH3PBBI3钙钛矿太阳能电池中通过介孔TiO2膜的表面改性研究了受控界面电子注射。随着2.2nm厚的ZrO2层的表面改性TiO2的裸球织物,将表面ZrO2薄膜从863 mV的厚度增加,开路电压(V-oc)随着863 mV的厚度而导致线性增加。(V-OC为1030 mV)对于中孔ZrO2,这是由于通过增厚表面ZrO2层来降低电子注入。通过光致发光光谱确认电子注射的变化。用表面ZrO2层降低了电荷集合,其由于注射进入TiO 2而导致的溶液处理后的钙钛矿层中的有限电子扩散长度。填充因子通过表面改性可重复地改善,这是由于分流阻力增加。通过控制的电子注入方法,通过在TiO 2表面上引入1.1nm厚的ZrO2层,从11.7%到13.6%提高了电力转换效率。

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