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Direct imprinting of thermally reduced silver nanoparticles via deformation-driven ink injection for high-performance, flexible metal grid embedded transparent conductors

机译:通过变形驱动的喷墨喷射热还原银纳米颗粒的直接印迹,用于高性能,柔性金属栅格嵌入式透明导体

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摘要

We developed a method for direct imprinting of thermally reduced Ag nanoparticles via deformation-driven ink injection to yield high-performance metal grid transparent conductors (TCs). A grid patterned mold was created to have a macroscale cavity by designing a "reservoir" that captured outgoing ink and injected the captured ink into the grid patterned mold cavity by a roof deformation. The ink supply from the reservoir contributed to not only improving the ink filling, but also decreasing the linewidth of the grid patterned mold cavity due to a sidewall deformation on the liquid film. The metal grid TCs fabricated using the reservoir-assisted mold performed better than the metal grids prepared using the typical mold in terms of the sheet resistance (4.7 vs. 12.6 Omega sq(-1)) and transmittance at 550 nm (93.5 vs. 90.7%), respectively. The metal grid TCs were embedded into large-scale, flexible, and transparent films, which showed a reasonable electromechanical stability under repeated bending. The metal grid embedded TCs were fabricated for application in touch screen panels. Our approach provides a new route for fabrication of high-performance, solution-processed micro/nanoscale metal grid TCs and hybrid TCs based on Ag nanowires, graphene, or carbon nanotubes for use in a variety of next-generation flexible optoelectronic devices.
机译:我们开发了一种通过变形驱动的喷墨喷射通过变形驱动的墨水注射直接印刷热还原Ag纳米颗粒,得到高性能金属电网透明导体(TCS)。通过设计捕获输出墨水并通过屋顶变形设计捕获输出墨水并将捕获的墨水注入网格图案模腔中的“储存器”来产生宏观腔。储存器的墨水供应不仅有助于改善墨水填充,而且由于液体膜上的侧壁变形,还降低了网格图案模腔的线宽。使用储液辅助模具制造的金属栅格TC比使用典型模具在薄层电阻(4.7与12.6ωSq(-1))和550nm处的透射率(93.5与90.7 %), 分别。将金属栅格TCS嵌入大规模,柔性和透明的薄膜中,该薄膜显示出在重复弯曲下的合理机电稳定性。在触摸屏面板中施加金属栅格嵌入式TCS。我们的方法提供了一种用于制造高性能,基于Ag纳米线,石墨烯或碳纳米管的高性能,溶液处理的微/纳米金属栅格TCS和杂合TC的新途径,用于各种下一代柔性光电器件。

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  • 来源
    《RSC Advances》 |2015年第79期|共8页
  • 作者

    Oh Y. S.; Choi D. Y.; Sung H. J.;

  • 作者单位

    Korea Adv Inst Sci &

    Technol Dept Mech Engn Taejon 34141 South Korea;

    Korea Adv Inst Sci &

    Technol Dept Mech Engn Taejon 34141 South Korea;

    Korea Adv Inst Sci &

    Technol Dept Mech Engn Taejon 34141 South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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