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Enhanced thermoelectric performance of n-type Bi2S3 with added ZnO for power generation

机译:增强N型BI2S3的热电性能,添加ZnO用于发电

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摘要

Although Bi2S3 is one of the promising thermoelectric materials, its practical application is limited by a relatively low dimensionless figure of merit (ZT), and especially low electrical conductivity. In this work, ZnO was used to tune the thermal and electrical properties of Bi2S3. In the preparation processes of mechanical alloying (MA) and spark plasma sintering (SPS), small amounts of ZnO converted to ZnS in the sulfur rich environment, accompanied by the production of sulfur vacancies and micro/nanostructures. The sulfur vacancies increased the electrical conductivity of n-type Bi2S3 and micro/nanostructures scattered phonons without commonly deteriorating electronic transport. The maximum ZT value of 0.66 at 675 K for Bi2S3 doped with 1.0 mol% ZnO was obtained and the results of this work perhaps provide a new way for designing and fabricating thermoelectric materials.
机译:尽管Bi2S3是有前途的热电材料之一,但其实际应用受到相对低的无量纲(ZT)的限制,尤其是低导电性。 在这项工作中,ZnO用于调整Bi2S3的热和电性能。 在机械合金化(MA)和火花等离子体烧结(SPS)的制备方法中,少量ZnO转化为硫的富含环境中的ZnS,伴随着硫空位和微/纳米结构的产生。 硫空位增加了N型BI2S3和微/纳米结构散射声子的电导率而不会使电子传输脱落。 获得掺杂1.0mol%ZnO的Bi2S3的675k的最大Zt值为0.66,并且该工作的结果可能为设计和制造热电材料提供了一种新的方式。

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  • 来源
    《RSC Advances》 |2015年第39期|共6页
  • 作者单位

    Tianjin Univ Technol Sch Mat Sci &

    Engn Tianjin 300384 Peoples R China;

    Tianjin Univ Technol Sch Mat Sci &

    Engn Tianjin 300384 Peoples R China;

    Tianjin Univ Technol Tianjin Key Lab Photoelect Mat &

    Devices Tianjin 300384 Peoples R China;

    Tianjin Univ Technol Tianjin Key Lab Photoelect Mat &

    Devices Tianjin 300384 Peoples R China;

    Tianjin Univ Technol Minist Educ Key Lab Display Mat &

    Photoelect Devices Tianjin 300384 Peoples R China;

    Tianjin Univ Technol Minist Educ Key Lab Display Mat &

    Photoelect Devices Tianjin 300384 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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