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Tunable p-type doping of Si nanostructures for near infrared light photodetector application

机译：用于近红外光光电探测器应用的Si纳米结构的可调谐p型掺杂

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摘要

In this study, we present a simple oxide assisted p-type doping of Si nanostructures by evaporating a mixed powder composed of SiB6 and SiO. It was found that Si nanoribbons (Si NRs) which can be obtained at high SiB6 content, will give way to Si nanowires (Si NWs) when the content of SiB6 in the mixed powder was reduced. According to our transport measurement of field effect transistors (FETs) assembled on individual Si nanostructures, the as-prepared Si nanostructures with different boron doping levels all exhibit typical p-type conduction characteristics. Additionally, the electrical conductivity of the Si nanostructures can be tuned over 7 orders of magnitude from 8.98 x 10(2) S cm(-1) for the highly doped sample to 3.36 x 10(-5) S cm(-1) for the lightly doped sample. We also assembled a nano-photodetector based on monolayer graphene and the as-prepared Si nanostructures, which exhibits ultra-sensitivity to 850 nm near infrared light (NIR) illumination with a nanosecond response speed (tau(rise)/tau(fall): 181/233 ns). The generality of the above results suggest that the Si nanostructures are promising building blocks for future electronic and optoelectronic device applications.
机译：在这项研究中，我们通过蒸发由SIB6和SiO组成的混合粉末来呈现Si纳米结构的简单氧化物辅助p型掺杂。发现，当在混合粉末中的SIB6含量降低时，可以在高SIB6含量中获得的Si纳米波氏（Si NRS）将使Si纳米线（Si NWS）递给Si纳米线（Si NWS）。根据我们在单独的Si纳米结构上组装的场效应晶体管（FET）的运输测量，用不同的硼掺杂水平的AS制备的Si纳米结构表现出典型的p型传导特性。另外，Si纳米结构的电导率可以从8.98×10（2）厘米（-1）超过7个大小的数量级，用于高掺杂的样品至3.36×10（-5）Scm（-​​1）轻微掺杂的样品。我们还基于单层石墨烯和制备的Si纳米结构组装了一种纳米光电探测器，其具有纳秒响应速度（TAU（上升）/ Tau（秋季）近红外光（NIR）照明的超敏感性。 181/233 ns）。上述结果的一般性表明Si纳米结构是未来电子和光电器件应用的承诺块。

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  • 来源
    《RSC Advances》 |2015年第25期|共7页
  • 作者

    Liang Feng-Xia; Zhang Deng-Yue; Zou Yi-feng; Hu Han; Zhang Teng-Fei; Wu Yu-Cheng; Luo Lin-Bao;

  • 作者单位

    Hefei Univ Technol Sch Mat Sci &

    Engn Anhui Prov Key Lab Adv Funct Mat &

    Devices Hefei 230009 Anhui Peoples R China;

    Hefei Univ Technol Sch Mat Sci &

    Engn Anhui Prov Key Lab Adv Funct Mat &

    Devices Hefei 230009 Anhui Peoples R China;

    Hefei Univ Technol Sch Elect Sci &

    Appl Phys Hefei 230009 Anhui Peoples R China;

    Hefei Univ Technol Sch Elect Sci &

    Appl Phys Hefei 230009 Anhui Peoples R China;

    Hefei Univ Technol Sch Elect Sci &

    Appl Phys Hefei 230009 Anhui Peoples R China;

    Hefei Univ Technol Sch Mat Sci &

    Engn Anhui Prov Key Lab Adv Funct Mat &

    Devices Hefei 230009 Anhui Peoples R China;

    Hefei Univ Technol Sch Elect Sci &

    Appl Phys Hefei 230009 Anhui Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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