Ultraviolet photodetector based on heterojunction of n-ZnO microwire/p-GaN film

Ding Meng; Zhao Dongxu; Yao Bin; Li Zhipeng; Xu Xijin

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Ultraviolet photodetector based on heterojunction of n-ZnO microwire/p-GaN film

机译：基于N-ZnO微针/ P-GaN膜的异质结的紫外光探测器

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High quality ZnO microwires have been fabricated by chemical vapor deposition method. Ultraviolet photodetector based on heterojunction of n-ZnO (individual microwire)/p-GaN film was fabricated. The current-voltage characteristic of the photodetector was investigated, which showed that the heterojunction had rectifying behavior with rectification ratio (I-forward/I-reverse) of about 6.3 x 10(2) at 4 V. The photoresponse spectrum displayed a sharp cut-off at the wavelength of 380 nm, and the photoresponsivity was as high as 0.45 A W-1 at 0 V and 1.3 A W-1 at 2.5 V reverse bias. The ultraviolet-visible rejection ratio (R370 nm/R450 nm) is three orders of magnitude under zero bias.

机译：通过化学气相沉积方法制造了优质的ZnO微线。制造了基于N-ZnO（个体微线）/ p-GaN膜的异质结的紫外线光电探测器。研究了光电探测器的电流 - 电压特性，表明异质结具有在4V的4V中的整流比（I-Deadon / I反向）的整流行为。光响应频谱显示出急剧切割在380nm的波长处的-off，并且光响应性高达0.45A W-1，在0V和1.3AW-1处，在2.5V反向偏压。紫外 - 可见抑制比（R370 nm / R450nm）是零偏压下的三个数量级。

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来源
《RSC Advances》 |2015年第2期|共5页
作者
Ding Meng; Zhao Dongxu; Yao Bin; Li Zhipeng; Xu Xijin;
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作者单位

Univ Jinan Sch Phys &

Technol Jinan 250022 Peoples R China;

Chinese Acad Sci Changchun Inst Opt Fine Mech &

Phys Lab Excited State Proc Changchun 130021 Peoples R China;

Jilin Univ Dept Phys Changchun 130023 Peoples R China;

Western Digital Co Mat Characterizat Grp Fremont CA 94539 USA;

Univ Jinan Sch Phys &

Technol Jinan 250022 Peoples R China;

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正文语种 eng
中图分类化学;
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1. Ultraviolet photodetector based on heterojunction of n-ZnO microwire/p-GaN film [J] . Ding Meng, Zhao Dongxu, Yao Bin, RSC Advances . 2015,第2期

机译：基于N-ZnO微针/ P-GaN膜的异质结的紫外光探测器
2. High Spectrum Selectivity Ultraviolet Photodetector Fabricated from an n-ZnO/p-GaN Heterojunction [J] . H.Zhu, C.X.Shan, B.Yao The journal of physical chemistry, C. Nanomaterials and interfaces . 2008,第51期

机译：由n-ZnO / p-GaN异质结制成的高光谱选择性紫外光电探测器
3. Ultraviolet electroluminescence from a n-ZnO film/p-GaN heterojunction under both forward and reverse bias [J] . Ai Qiu, Liu Kewei, Ma Hongyu, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2018,第42期

机译：来自正向和反向偏置的N-ZnO膜/ P-GaN异质结的紫外线电致发光
4. Ultraviolet light emitting diodes based on hydrothermal grown crystalline n-ZnO on p-GaN film [C] . Tu Yung-Chun, Wang Shui-Jinn, Lin Tseng-Hsing, Annual Device Research Conference . 2015

机译：在p-GaN膜上基于水热生长晶体n-ZnO的紫外发光二极管
5. Ultraviolet photodetectors based on aluminum gallium nitride films grown by molecular beam epitaxy. [D] . Misra, Mira. 2000

机译：基于分子束外延生长的氮化铝镓膜的紫外线光电探测器。
6. High-Performance Ultraviolet Photodetector Based on a Zinc Oxide Nanoparticle@Single-Walled Carbon Nanotube Heterojunction Hybrid Film [O] . Myung-Soo Choi, Taehyun Park, Woo-Jae Kim, 2020

机译：基于氧化锌纳米粒子@单壁碳纳米管异质结杂化膜的高性能紫外光电探测器
7. Properties of the RF Sputter Deposited n-ZnO Thin-Film and the n-ZnO/p-GaN heterojunction LED [O] . Dongwhee Shin, Changsub Byun, Seontai Kim 2013

机译：RF溅射沉积的N-ZnO薄膜和N-ZnO / P-GaN异质结LED的性质

Ultraviolet photodetector based on heterojunction of n-ZnO microwire/p-GaN film

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