Direct growth of etch pit-free GaN crystals on few-layer graphene

Chae Seung Jin; Kim Yong Hwan; Seo Tae Hoon; Duong Dinh Loc; Lee Seung Mi; Park Min Ho; Kim Eun Sung; Bae Jung Jun; Lee Si Young; Jeong Hyun; Suh Eun-Kyung; Yang Cheol Woong; Jeong Mun Seok; Lee Young Hee

首页> 外文期刊>RSC Advances >Direct growth of etch pit-free GaN crystals on few-layer graphene

【24h】

Direct growth of etch pit-free GaN crystals on few-layer graphene

机译：在几层石墨烯上直接生长蚀刻坑GaN晶体

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We report high-quality GaN crystals grown directly on graphene layers without a buffer layer by metal-organic chemical vapour deposition. Photoluminescence and Raman spectra revealed that GaN crystals grown on graphene layers had mild strain as compared to those grown on sapphire and SiO2 substrates. Etch pits were not observed on the surface of GaN/graphene, in which threading dislocations were diminished inside the bulk. This is markedly different from GaN/sapphire, in which threading dislocations were present on GaN surfaces. This opens a new possibility that graphene with pi electrons and hexagonal symmetry could be an ideal substrate for GaN crystal growth instead of expensive sapphire substrates.

机译：我们报告了在没有缓冲层的石墨烯层上直接生长的高质量GaN晶体，通过金属 - 有机化学气相沉积。光致发光和拉曼光谱显示，与在蓝宝石和SiO 2基材上生长的那些相比，在石墨烯层上生长的GaN晶体具有轻微的菌株。在GaN /石墨烯的表面上未观察到蚀刻凹坑，其中螺纹脱位在体积内降低。这与GaN / Sapphire有明显不同，其中甘草表面上存在螺纹脱位。这使得具有PI电子和六边形对称性的石墨烯可以是GaN晶体生长而不是昂贵的蓝宝石基板的理想基板。

著录项

来源
《RSC Advances》 |2015年第2期|共7页
作者
Chae Seung Jin; Kim Yong Hwan; Seo Tae Hoon; Duong Dinh Loc; Lee Seung Mi; Park Min Ho; Kim Eun Sung; Bae Jung Jun; Lee Si Young; Jeong Hyun; Suh Eun-Kyung; Yang Cheol Woong; Jeong Mun Seok; Lee Young Hee;
展开▼
作者单位

Sungkyunkwan Univ Inst Basic Sci Ctr Integrated Nanostruct Phys Suwon 440746 South Korea;

Sungkyunkwan Univ Inst Basic Sci Ctr Integrated Nanostruct Phys Suwon 440746 South Korea;

Chonbuk Natl Univ Sch Semicond &

Chem Engn Jeonju 561756 South Korea;

Sungkyunkwan Univ Inst Basic Sci Ctr Integrated Nanostruct Phys Suwon 440746 South Korea;

Korea Res Inst Stand &

Sci Ctr Nanocharacterizat Taejon 305340 South Korea;

Sungkyunkwan Univ Dept Adv Mat Engn Suwon 440746 South Korea;

Sungkyunkwan Univ Inst Basic Sci Ctr Integrated Nanostruct Phys Suwon 440746 South Korea;

Sungkyunkwan Univ Inst Basic Sci Ctr Integrated Nanostruct Phys Suwon 440746 South Korea;

Sungkyunkwan Univ Inst Basic Sci Ctr Integrated Nanostruct Phys Suwon 440746 South Korea;

Sungkyunkwan Univ Inst Basic Sci Ctr Integrated Nanostruct Phys Suwon 440746 South Korea;

Chonbuk Natl Univ Sch Semicond &

Chem Engn Jeonju 561756 South Korea;

Sungkyunkwan Univ Dept Adv Mat Engn Suwon 440746 South Korea;

Sungkyunkwan Univ Inst Basic Sci Ctr Integrated Nanostruct Phys Suwon 440746 South Korea;

Sungkyunkwan Univ Inst Basic Sci Ctr Integrated Nanostruct Phys Suwon 440746 South Korea;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类化学;
关键词

相似文献

外文文献
中文文献
专利

1. Direct growth of etch pit-free GaN crystals on few-layer graphene [J] . Chae Seung Jin, Kim Yong Hwan, Seo Tae Hoon, RSC Advances . 2015,第2期

机译：在几层石墨烯上直接生长蚀刻坑GaN晶体
2. Controlling single and few-layer graphene crystals growth in a solid carbon source based chemical vapor deposition [J] . Papon Remi, Kalita Golap, Sharma Subash, Applied Physics Letters . 2014,第13期

机译：在基于固态碳源的化学气相沉积中控制单层和多层石墨烯晶体的生长
3. Controlling single and few-layer graphene crystals growth in a solid carbon source based chemical vapor deposition [J] . Remi Papon, Golap Kalita, Subash Sharma, Applied Physics Letters . 2014,第13期

机译：在基于固态碳源的化学气相沉积中控制单层和多层石墨烯晶体的生长
4. GaN Single Crystalline Domain Growth on Graphene Substrate [C] . Jonghyurk Park, H. Lee, D. Kim, Pacific Rim Meeting on Electrochemical and Solid-State Science . 2020

机译：GaN单晶结构域生长石墨烯基材
5. Direct Growth of Graphene-like Films on Single Crystal Quartz Substrates. [D] . Samsonau, Siarhei. 2013

机译：在单晶石英衬底上直接生长类石墨烯薄膜。
6. Direct growth of few-layer graphene on AlN-based resonators for high-sensitivity gravimetric biosensors [O] . Jimena Olivares, Teona Mirea, Lorena Gordillo-Dagallier, 2019

机译：在高灵敏度重力生物传感器的基于AlN的谐振器上直接生长几层石墨烯
7. Direct growth of few-layer graphene on AlN-based resonators for high-sensitivity gravimetric biosensors [O] . Jimena Olivares, Teona Mirea, Lorena Gordillo-Dagallier, 2019

机译：在基于ALN的谐振器上直接生长几层石墨烯，用于高灵敏度重量体传感器

Direct growth of etch pit-free GaN crystals on few-layer graphene

摘要

著录项

相似文献

相关主题

期刊订阅