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DNA reusability and optoelectronic characteristics of streptavidin-conjugated DNA crystals on a quartz substrate

机译:石英基质中链霉蛋白缀合的DNA晶体的DNA可重用性和光电特性

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摘要

We demonstrate self-assembled double-crossover (DX) DNA crystal growth and coverage on quartz by the substrate assisted growth method. Here we introduced the novel concept of a reusability process to fabricate the DX crystals on a given substrate with a 10 nM DNA concentration, which is equal to the saturation concentration and this concentration is enough to fully cover the substrate with DX crystals. Also the DX crystals with biotinylated oligonucleotides (DXB) were constructed based on the structure of immobile crossover branched junctions. Upon streptavidin conjugation with DNA, the Raman band intensities were increased as compared to pristine DX crystals which indicate the strong bonding between the biotinylated DXB crystals and streptavidin. The DX crystals showed a relatively higher current than streptavidin conjugated DXB crystals because of the electrically insulating characteristic of streptavidin. Furthermore, the optical band gap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) as well as the second band onset were determined and discussed. The HOMO-LUMO band gaps of DNA crystals, DNA crystals with biotins, and DNA crystals with biotins and streptavidin showed an inverted V-shape and the second band onsets - consistent with the electrical characteristics - revealed the increasing behavior with protein conjugation.
机译:我们证明自组装双交换(DX)DNA晶体由基板辅助生长方法生长和覆盖在石英。在这里,我们引入了一个可重用性过程的新颖概念来制造具有10nM的DNA浓度,其等于饱和浓度,该浓度足以完全覆盖与DX晶体衬底中的给定的衬底上的DX晶体。还用生物素化的寡核苷酸(DXB)的DX晶体基于固定的交叉支链结的结构构建。在与链亲和素的DNA缀合,拉曼条带强度相比增加原始DX晶体,其表明生物素化的DXB晶体和链霉之间的强结合的。的DX晶体显示出比链霉因为链霉的电绝缘特性的共轭DXB晶体相对较高的电流。此外,最高占据分子轨道(HOMO)之间的最低未占分子轨道(LUMO)的第二频带发病光学带隙和以及测定和讨论。 DNA晶体,用生物素DNA晶体,和DNA晶体的与生物素和链霉的HOMO-LUMO带隙呈倒V形和第二带声母 - 与电特性一致 - 揭示了与蛋白质结合的增加行为。

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  • 来源
    《RSC Advances》 |2015年第49期|共7页
  • 作者单位

    Sungkyunkwan Univ Sungkyunkwan Adv Inst Nanotechnol SAINT Suwon 440746 South Korea;

    Yonsei Univ Dept Phys Seoul 120749 South Korea;

    Sungkyunkwan Univ Sungkyunkwan Adv Inst Nanotechnol SAINT Suwon 440746 South Korea;

    Sungkyunkwan Univ Sungkyunkwan Adv Inst Nanotechnol SAINT Suwon 440746 South Korea;

    Sungkyunkwan Univ Sungkyunkwan Adv Inst Nanotechnol SAINT Suwon 440746 South Korea;

    Sungkyunkwan Univ Sungkyunkwan Adv Inst Nanotechnol SAINT Suwon 440746 South Korea;

    Yonsei Univ Dept Phys Seoul 120749 South Korea;

    Sungkyunkwan Univ Sungkyunkwan Adv Inst Nanotechnol SAINT Suwon 440746 South Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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